Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes

Abstract

InGaN quantum wells were grown using metalorganic chemical vapor phase epitaxy (vertical and horizontal types of reactors) on stripes made on GaN substrate. The stripe width was 5, 10, 20, 50, and 100 µm and their height was 4 and 1 µm. InGaN wells grown on stripes made in the direction perpendicular to the off-cut had a rough morphology and, therefore, this azimuth of stripes was not further explored. InGaN wells grown on the stripes made in the direction parallel to the GaN substrate off-cut had a step-flow-like morphology. For these samples (grown at low temperatures), we found out that the InGaN growth rate was higher for the narrower stripes. The higher growth rate induces a higher indium incorporation and a longer wavelength emission in photoluminescence measurements. This phenomenon is very clear for the 4 µm high stripes and less pronounced for the shallower 1 µm high stripes. The dependence of the emission wavelength on the stripe width paves a way to multicolor emitters.

Light-Emitting V-Pits: An Alternative Approach toward Luminescent Indium-Rich InGaN Quantum Dots

“…We note that the variation of composition across different structural features could arise from both the dissimilar diffusion lengths of the In/Ga adatoms, 31 as well as varying diffusion rates due to height deviations between the features. 31,32 Our study thus far demonstrates that the intrinsic large lattice mismatch of Si can be taken advantage of, creating the means for long wavelength emission from spontaneous Inrich QD growth. Although nonuniform wavelengths may be expected from the various light-emitting elements, by further making use of the shorter wavelength sidewall QW emission in combination with the red-shifted QD emission, our structure may potentially allow phosphor-free white light through a nonpatterned approach.…”

Special Issue “Advances in Epitaxial Materials”-Editorial Preface

“…In the Special Issue, four papers [1,3,4,10] report epitaxial growth using Metalorganic Chemical Vapor Phase Epitaxy (MOVPE). This is the most popular method used for growing most epitaxial layers in the semiconductor industry.…”

“…This issue is discussed in the paper of Y.L. Casallas-Moreno et al [ 2 ] for InN nanocolumns on AlN/Si substrates and of M. Sarzynski et al [ 3 ] for InGaN quantum wells on narrow stripes made on GaN substrates.…”

“…The popularity of nitride semiconductors is reflected in the Special Issue in papers of R. Czernecki et al [1], Y.L. Casallas-Moreno et al [2], M. Sarzynski et al [3], Akira Kusaba et al [4], and Takeshi Ohgaki et al [5].…”

Numerical Analysis of the High Pressure MOVPE Upside-Down Reactor for GaN Growth

“…Growth conditions are determined by individual and mutual dependences among the pressure and temperature distributions in the reactor chamber; the type, ratio, and flow rate of the precursors and carrier gasses; as well as some other factors. The process is even more difficult to control if the whole structure-with different layers, various doping, and quantum wells [8,9]-is required, or if selective area growth is considered [10][11][12][13]. Furthermore, the temperature measurements in the reactor chamber are limited due to the restricted access and the expected range (e.g., 600 • C to 1200 • C in the case of GaN).…”