Indium Phosphide (InP)

Glembocki, O. J.; Piller, H.

doi:10.1016/b978-0-08-054721-3.50025-3

Cited by 25 publications

(7 citation statements)

References 11 publications

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“…We chose to employ the scattering matrix method to solve the Maxwell equations for normally incident light in order to calculate the absorption spectrum A 1(2) (λ) of the nanowire top and bottom cells. We use tabulated refractive index values n ( λ ) for the Al 0.10 Ga 0.90 As 28 , In 0.34 Ga 0.66 As 29 , Ga 0.51 In 0.49 P 31 , and InP 34 . We then calculate the Shockley-Queisser detailed balance efficiency (see Supplementary Information Eqs.…”

Section: Geometry Designmentioning

confidence: 99%

Design for strong absorption in a nanowire array tandem solar cell

Chen

Pistol

Anttu

2016

Sci Rep

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Semiconductor nanowires are a promising candidate for next-generation solar cells. However, the optical response of nanowires is, due to diffraction effects, complicated to optimize. Here, we optimize through optical modeling the absorption in a dual-junction nanowire-array solar cell in terms of the Shockley-Quessier detailed balance efficiency limit. We identify efficiency maxima that originate from resonant absorption of photons through the HE11 and the HE12 waveguide modes in the top cell. An efficiency limit above 40% is reached in the band gap optimized Al0.10Ga0.90As/In0.34Ga0.66As system when we allow for different diameter for the top and the bottom nanowire subcell. However, for experiments, equal diameter for the top and the bottom cell might be easier to realize. In this case, we find in our modeling a modest 1–2% drop in the efficiency limit. In the Ga0.51In0.49P/InP system, an efficiency limit of η = 37.3% could be reached. These efficiencies, which include reflection losses and sub-optimal absorption, are well above the 31.0% limit of a perfectly-absorbing, idealized single-junction bulk cell, and close to the 42.0% limit of the idealized dual-junction bulk cell. Our results offer guidance in the choice of materials and dimensions for nanowires with potential for high efficiency tandem solar cells.

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Section: Geometry Designmentioning

confidence: 99%

Design for strong absorption in a nanowire array tandem solar cell

Chen

Pistol

Anttu

2016

Sci Rep

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“…The NWs are placed in a square array with period p = 400 nm in both directions . Tabulated values of the refractive index n are used for InP . For the air between and on top of the NWs, the value of n = 1 is used.…”

mentioning

confidence: 99%

Optical Far-Field Method with Subwavelength Accuracy for the Determination of Nanostructure Dimensions in Large-Area Samples

et al. 2013

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The physical, chemical, and biological properties of nanostructures depend strongly on their geometrical dimensions. Here we present a fast, noninvasive, simple-to-perform, purely optical method that is capable of characterizing nanostructure dimensions over large areas with an accuracy comparable to that of scanning electron microscopy. This far-field method is based on the analysis of unique fingerprints in experimentally measured reflectance spectra using full three-dimensional optical modeling. We demonstrate the strength of our method on large-area (millimeter-sized) arrays of vertical InP nanowires, for which we simultaneously determine the diameter and length as well as cross-sample morphological variations thereof. Explicitly, the diameter is determined with an accuracy better than 10 nm and the length with an accuracy better than 30 nm. The method is versatile and robust, and we believe that it will provide a powerful and standardized measurement technique for large-area nanostructure arrays suitable for both research and industrial applications.

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“…However, InP and GaAs are direct bandgap semiconductors that show rather large Im(n) almost all the way to the bandgap wavelength. For InP with λ bg =925 nm, Im(n)>0.1 for λ<900 nm and Im(n)>0.3 for λ<650 nm [19]. For GaAs, we find similarly high values for Im(n), which are approximately 30% lower than for InP [26].…”

Section: Comparison To a Single Gaas And A Single Si Nanowirementioning

confidence: 50%

“…The light scattering is analyzed with the Maxwell equations with light an electromagnetic wave. The optical properties of the InP nanowires and the InP substrate are taken into account through tabulated values of the wavelength-dependent complex-valued refractive index n InP [19]. A non-zero value for Im(n InP ) indicates absorption, and the bulk absorption length is given by 1/(4πIm[n InP (λ)]/λ) where λ is the wavelength of light in vacuum.…”

Section: Modeling Methodsmentioning

confidence: 99%

Absorption of light in a single vertical nanowire and a nanowire array

Anttu

2019

Nanotechnology

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Both a single III-V semiconductor nanowire and an array of such nanowires have shown promise for solar cell applications. However, the correspondence between the optical properties of the single nanowire and the nanowire array has not been studied. Here, we perform electromagnetic modeling of InP nanowires to study this relationship. We find that a single nanowire can show at an absorption peak a remarkably high absorption cross-section that is more than 50 times the geometrical crosssection. With optimization of the diameter of the single nanowire, the short-circuit current density is 30 times higher than in a bulk solar cell. With such a strong absorption, we predict an apparent efficiency >500 % for the single nanowire solar cell. In contrast, we show that an efficient nanowire array solar cell cannot rely on strong absorption just through the absorption peak. Instead, the nanowires need to be packed rather closely to enhance the absorption of the full solar spectrum. At the optimum diameter for the nanowire array, neighboring nanowires compete strongly for absorption of incident photons at the absorption peak, which limits the absorption per nanowire by a factor of 18. As a result, the single InP nanowire is optimized at a diameter of 110 nm while the nanowires in the array are optimized at a considerably larger diameter of 180 nm. Importantly, we show analytically the coupling efficiency of incident light into the fundamental HE11 guided mode and consecutive absorption of the mode in the nanowires. With that analysis, we explain that a single nanowire shows two different absorption pathways -one through coupling into the guided mode and another by coupling into the nanowire through the sidewall. This analytical analysis also shows at which period the neighboring nanowires in an array start to compete for absorption of incident photons.

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Indium Phosphide (InP)

Cited by 25 publications

References 11 publications

Design for strong absorption in a nanowire array tandem solar cell

Design for strong absorption in a nanowire array tandem solar cell

Optical Far-Field Method with Subwavelength Accuracy for the Determination of Nanostructure Dimensions in Large-Area Samples

Absorption of light in a single vertical nanowire and a nanowire array

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