Indium phosphide particle detectors for low energy solar neutrino spectroscopy

Lund, J.C.; Olschner, F.; Sinclair, F.; Squillante, M.R.

doi:10.1016/0168-9002(88)90775-9

Cited by 36 publications

(8 citation statements)

References 6 publications

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“…Concerning the application of InP in radiation detectors, the large values of Z of In (49), high density (4.79 g/cm 3 ) and wide band-gap energy (1.34 eV) are appreciated. As a base detector material, InP can be used in a form of semiconducting epitaxial layers [1] or bulk grown semi-insulating crystals [2][3][4][5]. However, the exploitation of its potential is limited due to difficulties in realizing highly rectifying contacts on n-type materials.…”

Section: Jinst 7 C10005mentioning

confidence: 99%

Particle detectors based on InP Schottky diodes

Yatskiv

Grym

2012

J. Inst.

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A study of electrical properties and detection performance of Indium Phosphide detector structures with Schottky contacts prepared on high purity p-type InP was performed. Schottky barrier detectors were prepared by vacuum evaporation of Pd on p-type epitaxial layers grown on Zn-doped p-type substrates. The detection performance of the detectors was characterized by the measurement of pulse-height spectra with alpha particles emitted from 241 Am source at room temperature. The influence of the quality of p-type epitaxial layers on the charge-collection efficiency and energy resolution in the full-width half-maximum is discussed.

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Section: Jinst 7 C10005mentioning

confidence: 99%

Particle detectors based on InP Schottky diodes

Yatskiv

Grym

2012

J. Inst.

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“…They have the highest densities and atomic absorption coefficients and the widest energy band gaps. Also, on the contrary of most semiconductors, they do not follow the Klein´s relation [1]: ε = (2.67 ∆E + 0.87 ) eV but a different relation [2,3]: ε = (4.22 ∆E -4.82) eV (ε: energy for the creation of an electron-hole pair, and ∆E: energy band gap). This fact determines that the heavy metal halides (at least, the ones studied until now) have an energy necessary for the creation of an electron-hole pair similar to the one of other semiconductors, together with a wider energy band gap.…”

Section: Introductionmentioning

confidence: 95%

Growth of bismuth tri‐iodide platelets by the physical vapor deposition method

Cuña

Noguera

Saucedo

et al. 2004

Cryst. Res. Technol.

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The work reports the growth of single BI 3 crystals with platelets habit. Platelets were grown by physical vapor deposition (PVD) in a high vacuum atmosphere and with argon, polymer or iodine as additives. Crystals grew in the zone of maximum temperature gradient, perpendicular to the ampoule wall. Crystals grown with argon as additive show a very shining surface, have hexagonal (0 0 l) faces, sizes up to 20 x 10 mm 2 and thicknesses up to 100 µm. They were characterized by optical microscopy and scanning electron microscopy (SEM). Dendritic-like structures were found to be their main surface defect. SEM indicates that they grow from the staking of hexagonal unities. Electrical properties of the crystals grown under different growth conditions were determined. Resistivities up to 2 x 10 12 Ωcm (the best reported value for monocrystals of this material) were obtained. X-ray response was measured by irradiation of the platelets with a 241 Am source of 3.5 mR/h. A comparison of results according to the growth conditions was made. Properties of the crystals grown by this method are compared with the ones measured for others previously grown from the melt. Also, results for bismuth tri-iodide platelets are compared with the ones obtained for mercuric and lead iodide platelets.

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“…However, no significant effort has been done so far to prepare and study InP-based X-ray detectors. Some reported attempts to study detectors of ionizing particles were done on iron doped SI InP and it was shown that detectors based on this material possess low charge collection efficiency (CCE) and poor energy resolution [1,2]. There are three ways to improve CCE: by increasing (i) carrier mobility, (ii) carrier trapping time (iii) applied electric field.…”

Section: Introductionmentioning

confidence: 99%

Investigation of semi‐insulating InP co‐doped with Ti and various acceptors for use in X‐ray detection

Žďánský¹,

Pekárek

Gorodynskyy

et al. 2005

Cryst. Res. Technol.

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Semi-insulating InP single crystals co-doped with Zn and Ti and co-doped with Ti and Mn were grown by Czochralski technique. Wafers of these crystals were annealed for a long time at a high temperature and cooled slowly. The samples were characterized by temperature dependent resistivity and Hall coefficient measurements. The binding energies of Ti in semi-insulating InP co-doped with Ti and Zn and co-doped with Ti and Mn were found to differ which shows that Ti may occupy different sites in InP. The curves of Hall coefficient vs. reciprocal temperature deviate from straight lines at low temperatures due to electron and hole mixed conductance. The value of resistivity of the annealed semi-insulating InP co-doped with Ti and Mn reaches high resistivity at a reduced temperature easily achievable by thermo-electric devices which could make this material useable in X-ray detection.

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Indium phosphide particle detectors for low energy solar neutrino spectroscopy

Cited by 36 publications

References 6 publications

Particle detectors based on InP Schottky diodes

Particle detectors based on InP Schottky diodes

Growth of bismuth tri‐iodide platelets by the physical vapor deposition method

Investigation of semi‐insulating InP co‐doped with Ti and various acceptors for use in X‐ray detection

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