Indium Phosphide Photonic Circuits on Silicon Electronics

Williams, Kevin; Liu, X.; Matters-Kammerer, Marion K.; Meighan, A.; Spiegelberg, Marc; Tol, J.J.G.M. van der; Trajkovic, M.; Wale, M.J.; Yao, Weiming; Zhang, X.

doi:10.1364/ofc.2020.m3a.1

Cited by 4 publications

(3 citation statements)

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“…Transition-metal phosphides continue to attract research attention due to their applications in photovoltaic devices, biomedical imaging, catalysis, energy generation, and storage. − Nickel phosphides, as an important transition metal phosphide, have been explored as catalysts in different chemical reactions. − It is a binary system that has been synthesized in different compositions and phases, including NiP, Ni 2 P, Ni 3 P, NiP 2 , NiP 3 , Ni 5 P 4 , and Ni 12 P 12 . The multiplicity of phases of nickel phosphide is a constraint to the preparation of the desired/pure phase nickel phosphide system.…”

Section: Introductionmentioning

confidence: 99%

Triphenylphosphine-Assisted Transformation of NiS to Ni₂P through a Solvent-Less Pyrolysis Route: Synthesis and Electrocatalytic Performance

et al. 2021

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Straightforward synthetic routes to the preparation of transition metal phosphides or their chalcogenide analogues are highly desired due to their widespread applications, including catalysis. We report a facile and simple route for the preparation of a pure phase nickel phosphide (Ni 2 P) and phase transformations in the nickel sulfide (NiS) system through a solvent-less synthetic protocol. Decomposition of different sulfur-based complexes (dithiocarbamate, xanthate, and dithiophosphonate) of nickel(II) was investigated in the presence and absence of triphenylphosphine (TPP). The optimization of reaction parameters (nature of precursor, ratio of TPP, temperature, and time) indicated that phosphorus-and sulfur-containing inorganic dithiophosphonate complexes and TPP (1:1 mole ratio) produced pure nickel phosphide, whereas different phases of nickel sulfide were obtained from dithiocarbamate and xanthate precursors in the presence or absence of TPP. A plausible explanation of the sulfide or phosphide phase formation is suggested, and the performance of Ni 2 P was investigated as an electrocatalyst for supercapacitance and overall water-splitting reactions. The performance of Ni 2 P with the surface free of any capping agents is not well explored, as common synthetic methods are solution-based routes; therefore, the electrocatalytic performance was also compared with metal phosphides, prepared by other routes. The highest specific capacitance of 367 F/g was observed at 1 A/g, and the maximum energy and power density of Ni 2 P were calculated to be 17.9 Wh/kg and 6951 W/kg, respectively. The prepared nickel phosphide required overpotentials of 174 and 316 mV along with Tafel slopes of 115 and 95 mV/dec to achieve a current density of 10 mA/cm 2 for the hydrogen evolution reaction (HER) and the oxygen evolution reaction (OER), respectively.

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Section: Introductionmentioning

confidence: 99%

Triphenylphosphine-Assisted Transformation of NiS to Ni₂P through a Solvent-Less Pyrolysis Route: Synthesis and Electrocatalytic Performance

et al. 2021

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“…It is not possible to take this impedance closer to 50 Ohm because of the material properties and fabrication considerations in our design. However, if we bond the InP membrane on CMOS driver circuitry, the 50 Ohm can be avoided since the co-design of electronics and photonics allows a free choice of a reference impedance [22].…”

Section: B Improvement Methodsmentioning

confidence: 99%

Electro-Optic Slot Waveguide Phase Modulator on the InP Membrane on Silicon Platform

Kashi

Tol

Williams

et al. 2021

IEEE J. Quantum Electron.

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“…Finally, realizing broadband, high-density electrical interconnects through the polymer bonding layer is a key technology challenge to successful co-integration. In this paper, we present the recent work of the authors related to these design and technology aspects, extending the material presented in [35], and discuss how advances here can lead to wafer-scale cointegration of photonics with electronics. Section II discusses the interconnect schemes that are required for direct connection of EIC and PIC.…”

Section: Introductionmentioning

confidence: 99%

Towards the Integration of InP Photonics With Silicon Electronics: Design and Technology Challenges

Yao

Liu

Matters-Kammerer

et al. 2021

J. Lightwave Technol.

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Intimate integration of photonics with electronics is regarded as the key to further improvement in bandwidth, speed and energy efficiency of information transport systems. Here, a method based on wafer-scale polymer bonding is reviewed which is compatible with foundry-sourced high-performance InP photonics and BiCMOS electronics. We address challenges with respect to circuit architecture, co-simulation framework and interconnect technology and introduce our approach that can lead to broadband high-density interconnects between photonics and electronics. Recent proof-of-concept work utilizing DC-coupled driver connections to modulators, which significantly reduces the interconnect complexity, is summarized. Furthermore, cosimulation concepts based on equivalent circuit models are discussed with emphasis on the importance of impedance matching between driver and modulator. Finally, realizations of broadband interconnects and functional photonic building blocks after wafer bonding are highlighted to demonstrate the potential of this wafer-scale co-integration method.

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Indium Phosphide Photonic Circuits on Silicon Electronics

Abstract: The intimate integration of photonics and electronics in transceivers facilitates energyefficiency, bandwidth acceleration and a route to radical miniaturization. We present and implement a wafer-to-wafer integration method which combines electronic and photonic foundry technologies.

Cited by 4 publications

References 20 publications

Triphenylphosphine-Assisted Transformation of NiS to Ni₂P through a Solvent-Less Pyrolysis Route: Synthesis and Electrocatalytic Performance

Triphenylphosphine-Assisted Transformation of NiS to Ni₂P through a Solvent-Less Pyrolysis Route: Synthesis and Electrocatalytic Performance

Electro-Optic Slot Waveguide Phase Modulator on the InP Membrane on Silicon Platform

Towards the Integration of InP Photonics With Silicon Electronics: Design and Technology Challenges

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Indium Phosphide Photonic Circuits on Silicon Electronics

Abstract: The intimate integration of photonics and electronics in transceivers facilitates energyefficiency, bandwidth acceleration and a route to radical miniaturization. We present and implement a wafer-to-wafer integration method which combines electronic and photonic foundry technologies.

Cited by 4 publications

References 20 publications

Triphenylphosphine-Assisted Transformation of NiS to Ni2P through a Solvent-Less Pyrolysis Route: Synthesis and Electrocatalytic Performance

Triphenylphosphine-Assisted Transformation of NiS to Ni2P through a Solvent-Less Pyrolysis Route: Synthesis and Electrocatalytic Performance

Electro-Optic Slot Waveguide Phase Modulator on the InP Membrane on Silicon Platform

Towards the Integration of InP Photonics With Silicon Electronics: Design and Technology Challenges

Contact Info

Product

Resources

About

Triphenylphosphine-Assisted Transformation of NiS to Ni₂P through a Solvent-Less Pyrolysis Route: Synthesis and Electrocatalytic Performance

Triphenylphosphine-Assisted Transformation of NiS to Ni₂P through a Solvent-Less Pyrolysis Route: Synthesis and Electrocatalytic Performance