2010
DOI: 10.1002/9780470931011.ch12
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Indium Tin Oxide Nanosized Transparent Conductive Thin Films Obtained by Sputtering from Large Size Planar and Rotary Targets

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Cited by 3 publications
(3 citation statements)
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“…In the nitrogen‐processed films, XRD peaks corresponding to both In 2 O 3 and InN were identified, and no preferred orientation was observed in these films. We believe that the isolated crystallites observed on the surface were formed by a vaporization–condensation mechanism, whereby the growth of InON was triggered by the instability of sub‐oxides of indium at low temperatures and oxygen‐partial pressures . This led to the formation of a densified, nonporous layer that can be seen in the SEM fractographs in Fig.…”
Section: Resultssupporting
confidence: 73%
See 1 more Smart Citation
“…In the nitrogen‐processed films, XRD peaks corresponding to both In 2 O 3 and InN were identified, and no preferred orientation was observed in these films. We believe that the isolated crystallites observed on the surface were formed by a vaporization–condensation mechanism, whereby the growth of InON was triggered by the instability of sub‐oxides of indium at low temperatures and oxygen‐partial pressures . This led to the formation of a densified, nonporous layer that can be seen in the SEM fractographs in Fig.…”
Section: Resultssupporting
confidence: 73%
“…We believe that the isolated crystallites observed on the surface were formed by a vaporization-condensation mechanism, whereby the growth of InON was triggered by the instability of sub-oxides of indium at low temperatures and oxygen-partial pressures. 13 This led to the formation of a densified, nonporous layer that can be seen in the SEM fractographs in Fig. 1(b).…”
Section: Resultsmentioning
confidence: 95%
“…The Seebeck coefficient of ITO is given by Equation (4) , the same expression used for metals, which is valid because of the free electron-like behavior in degenerate semiconductors. Incorporation of nitrogen into ITO has been shown to reduce the carrier concentration as well as the Fermi level due to an increase in activation energy which increases the Seebeck coefficient of ITO [ 22 ]. Figures 11 and 12 show the thermoelectric output of an In 2 O 3 :ITO thin film thermocouple over many cycles and a 100 h heat soak test, respectively.…”
Section: Resultsmentioning
confidence: 99%