Indium-tin oxide regulated band gap of nitrogen-doped titanium oxide thin films for visible light photocatalyst

Abstract

Nitrogen-doped titanium oxide on Indium tin oxide (ITO) coated glass substrate using DC magnetron sputtering. XRD, AFM, and UV-VIS-NIR spectroscopy measurements were done for structural and morphological changes before and after the annealing process. Wide band gap of TiO x N y /ITO range between is 2.77-3.57 eV occurred in the influence of ITO. Photodegradation on methylene blue was studied and the efficiency was 64.58% compared to 73% UV. Hence, ITO supports the optical band gap of the valance level shifting by the electrons. So the redox potential is enhanced, and the reaction of splitting is shifting to the visible region. The role of the ITO is to withdraw the electron, but the holes are actively participating in the photocatalytic reaction.

Study of the Optoelectronic Properties of Titanium Nitride Thin Films Deposited on Glass by Reactive Sputtering in the Cathodic Cage

“…The optoelectronic parameters TiON and TiO 2 were used to guide the phase 2 adjustment of the A4 and A8 samples, thus improving the consistency of the models applied to these films 43,44 . The average thickness and roughness of the deposited films, obtained by SEM and AFM, respectively, were used as a fixed parameter during the adjustments of the ellipsometric measurements to build a more consistent model.…”