Individually Addressable and Spectrally Programmable Artificial Atoms in Silicon Photonics

Abstract

Artificial atoms in solids have emerged as leading systems for quantum information processing tasks such as quantum networking [1][2][3][4], sensing [5], and computing [6, 7]. A central goal is to develop platforms for precise and scalable control of individually addressable artificial atoms with efficient optical interfaces. Color centers in silicon [8][9][10][11], such as the recently-isolated carbonrelated 'G-center ' [12, 13], exhibit emission directly into the telecommunications O-band and can leverage the maturity of silicon-on-insulator (SOI) photonics. Here, we demonstrate the generation and individual addressing of G-center artificial atoms in an SOI photonic integrated circuit (PIC) platform. Focusing on the neutral charge state emission at 1278 nm, we observe waveguide-coupled single photon emission with an exceptionally narrow inhomogeneous distribution with standard deviation of 1.1 nm, an excited state lifetime of 8.3 ± 0.7 ns, and no degradation after months of operation. This demonstration opens the path to quantum information processing based on implantable artificial atoms in very large scale integrated (VLSI) photonics.

Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers

“…For the T-center, the sideband peaks are quite broad, but nevertheless the bulk-silicon phonon peaks at ∼1350 nm, ∼1370 nm and ∼1390 nm line up well with experiment [41]. It is also important to highlight that the experimental PL of the G-centers in SOI has a remarkably narrow ZPL linewidth of ∼ 0.17nm in this example, significantly narrower than the recently reported ZPL of 1.1 nm for a G-center in a waveguide [42] but slightly broader than the 0.1 nm linewidth observed for G-centers near the surface of bulk silicon samples [29]. Strain in the SOI device layer is the likely cause for this broadening.…”

Wafer-scale nanofabrication of telecom single-photon emitters in silicon

“…Our results enable the direct realization of quantum PICs with monolithically integrated singlephoton sources with electrical control [11]. These findings also provide a route for the quasi-deterministic creation of single G and W centers at desired locations of photonic structures [35], tunable cavities [36] and SOI waveguides [37]. Furthermore, our approach can potentially be applied for the controllable creation of other color centers in silicon, including T centers with optically-interfaced spins [38].…”

Scalable integration of quantum emitters into photonic integrated circuits

“…Color centers in SiC crystals also offer high photon emission rates [32] as well as electron spin readout possibilities [33]. New developments suggest artificial atoms in silicon [34][35][36] to be another promising platform for PIC integration.…”

“…Prominent examples of monolithic integrations are color centers in diamond and silicon carbide [22,69,71,73,74]. New developments of SPEs in silicon nitride [75] and G-centers in silicon [34][35][36], expand the material list where monolithic integration might be or is possible, respectively. Monolithic integration also has been demonstrated fabricating free-standing hBN circuits combined with subsequent emitter generation by an annealing process [64].…”

“…Randomly placed emitters in the QDs [72] High Yes Yes wave guides introduce high photon losses. SiC-color centers [114] H i g h Y e s Y e s hBN [115] H i g h Y e s Y e s G-centers in silicon [34][35][36] H i g h Y e s Y e s Monolithic (deterministic) SiV centers in SiC [69,70] Low Yes No SiC: yield of emitter creation via ion implantation has to be improved. QDs [76] High No No QDs: well-performing site-controlled QDs have to be produced.…”