Induced magnetism on silicon in Fe3Si quasi-Heusler compound

Abstract

Element-specific magnetic moments of epitaxially grown Fe3Si in D03 crystal symmetry were analyzed by means of x-ray absorption spectroscopy and its associated magnetic circular dichroism. To detect the weak magnetization induced at the Si sites, measurements were performed at both Si K edge and Si L3,2 edges. By band structure calculations based on either the SPR-KKR method or FLAPW with GGA, the spectroscopic features could be reproduced and provide an insight to the underlying physics. In addition, comparison of the experimental data to calculated spectra gave us the possibility to estimate the induced effective spin and orbital magnetic moment of Si in our sample, i.e. µ eff s = (−0.011 ± 0.005) µB and µ l = (−0.003 ± 0.003) µB, respectively. The sign and the order of magnitude of the tiny orbital magnetic moment has been confirmed by application of the magneto-optical sum rule.

Two-dimensional interaction of spin chains in the Si(553)-Au nanowire system

“…In the mentioned bulk materials the spin liquid properties have been identified through the temperature dependence of the magnetic susceptibility. Measuring this quantity for the surface spins in Si(553)-Au represents an experimental challenge, but could possibly be achieved by x-ray magnetic circular dichroism (XMCD) experiments at the Si K-and L-edges 34 . In summary, high resolution SPA-LEED, STM and DFT were employed to study the geometric structure of the Si(553)-Au system, which exhibits self-organized 1D Au atom rows on highly ordered Si step arrays separated by 14.8Å.…”

A soft X-ray plane-grating monochromator optimized for elliptical dipole radiation from modern sources

“…The highest photon energy used so far with elliptical polarization was 1853 eV for resonant excitation of the Si 1s edge. In that experiment, induced magnetic moments in Heusler-like Fe 3 Si were studied (Antoniak et al, 2012). Further prominent publications from the PM3 beamline can be found in additional references (Valencia et al, 2011;Radu et al, 2012;Antoniak et al, 2011;Mishra et al, 2009;Sanyal et al, 2010).…”

The Degree‐of‐Order Dependent Electronic Structures and Magnetic Properties of Fe3Si Alloys

“…The investigation and advance for new electronic devices, which achieve ultrahigh speed operation with ultralow power consumption, are strongly needed. [1][2][3][4] To solve vital issues induced by the scaling limit of electronic devices, spintronic devices as a compelling candidate for information processing draw lots of attention. [5][6][7][8][9] Specially, Heusler alloys with high Curie temperature (T C ) and high spin polarization are proper for spintronic devices.…”

“…The farther improvement for the capability of large‐scale integrated (LSIs) circuits is essential for highly intelligent information systems. The investigation and advance for new electronic devices, which achieve ultrahigh speed operation with ultralow power consumption, are strongly needed . To solve vital issues induced by the scaling limit of electronic devices, spintronic devices as a compelling candidate for information processing draw lots of attention .…”