Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors

Liu, Xianzhe; Xu, Hua; Ning, Honglong; Lu, Kuankuan; Zhang, Hongke; Zhang, Xiaochen; Yao, Rihui; Fang, Zhiqiang; Lu, Xubing; Peng, Junbiao

doi:10.1038/s41598-018-22602-4

Cited by 8 publications

(5 citation statements)

References 26 publications

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“…Currently, oxygen vacancies are closely related to the field-effect mobility and threshold voltage of metal-oxide-semiconductor devices, according to the equation:

O_{O}^{X} = \frac{1}{2} O_{2 (g)} + V_{O}^{* *} + 2 e^{-}

[20]. The XPS analysis of the channel region was implemented, as displayed in Figure 4.…”

Section: Resultsmentioning

confidence: 99%

Enhancement of Electrical Characteristics and Stability of Amorphous Si-Sn-O Thin Film Transistors with SiOx Passivation Layer

Liu

Chen

et al. 2018

Materials

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In this research, a passivated methodology was proposed for achieving good electrical characteristics for back-channel-etch (BCE) typed amorphous Si-Sn-O thin film transistors (a-STO TFTs). This methodology implied that the thermal annealing (i.e., pre-annealing) should be carried out before deposition of a SiOx passivation layer. The pre-annealing played an important role in affecting device performance, which did get rid of the contamination of the lithography process. Simultaneously, the acceptor-like sub-gap density of states (DOS) of devices was extracted for further understanding the reason for improving device performance. It found that the SiOx layer could reduce DOS of the device and successfully protect the device from surroundings. Finally, a-STO TFT applied with this passivated methodology could possess good electrical properties including a saturation mobility of 4.2 ± 0.2 cm2/V s, a low threshold voltage of 0.00 V, a large on/off current ratio of 6.94 × 108, and a steep subthreshold swing of 0.23 V/decade. The threshold voltage slightly shifted under bias stresses and recovered itself to its initial state without any annealing procedure, which was attributed to the charge trapping in the bulk dielectric layers or interface. The results of this study indicate that a-STO TFT could be a robust candidate for realizing a large-size and high-resolution display.

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“…Currently, oxygen vacancies are closely related to the field-effect mobility and threshold voltage of metal-oxide-semiconductor devices, according to the equation:

O_{O}^{X} = \frac{1}{2} O_{2 (g)} + V_{O}^{* *} + 2 e^{-}

[20]. The XPS analysis of the channel region was implemented, as displayed in Figure 4.…”

Section: Resultsmentioning

confidence: 99%

Enhancement of Electrical Characteristics and Stability of Amorphous Si-Sn-O Thin Film Transistors with SiOx Passivation Layer

Liu

Chen

et al. 2018

Materials

Self Cite

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“…The mass density of a thin film is related to the critical angle (θ c ). Equation (1) shows that there is a proportional relationship between the density and θ c [25]:…”

Section: Physical Properties Of Ino X Semiconductor Thin Filmsmentioning

confidence: 99%

Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing

Park

Eun

et al. 2023

Nanomaterials

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The interest in low processing temperature for printable transistors is rapidly increasing with the introduction of a new form factor in electronics and the growing importance of high throughput. This paper reports the fabrication of low-temperature-processable enhancement-mode amorphous oxide thin-film transistors (TFTs) using the solution process. A facile low-pressure annealing (LPA) method is proposed for the activation of indium oxide (InOx) semiconductors at a significantly low processing temperature of 200 °C. Thermal annealing at a pressure of about ~10 Torr induces effective condensation in InOx even at a low temperature. As a result, the fabricated LPA InOx TFTs not only functioned in enhancement mode but also exhibited outstanding switching characteristics with a high on/off current ratio of 4.91 × 109. Furthermore, the LPA InOx TFTs exhibit stable operation under bias stress compared to the control device due to the low concentration of hydroxyl defects.

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“…Figure 2a,b present the obtained XRR curves and extracted film density res the control group, LPTA-80, and LPTA-140, respectively. Figure 2b presents an en critical angle region of Figure 2a to distinguish between small critical angle diffe The following Equation (1) [20] shows a proportional relationship between the fil sity (ρ) and the square of the critical angle (θc).…”

Section: Physical Properties and Water Contact Angles Of Zto Thin Filmsmentioning

confidence: 99%

“…Figure 2b presents an enlarged critical angle region of Figure 2a to distinguish between small critical angle differences. The following Equation (1) [20] shows a proportional relationship between the film density (ρ) and the square of the critical angle (θ c ).…”

Section: Physical Properties and Water Contact Angles Of Zto Thin Filmsmentioning

confidence: 99%

Improvement in Switching Characteristics and Bias Stability of Solution-Processed Zinc–Tin Oxide Thin Film Transistors via Simple Low-Pressure Thermal Annealing Treatment

et al. 2023

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In this study, we used a low-pressure thermal annealing (LPTA) treatment to improve the switching characteristics and bias stability of zinc–tin oxide (ZTO) thin film transistors (TFTs). For this, we first fabricated the TFT and then applied the LPTA treatment at temperatures of 80 °C and 140 °C. The LPTA treatment reduced the number of defects in the bulk and interface of the ZTO TFTs. In addition, the changes in the water contact angle on the ZTO TFT surface indicated that the LPTA treatment reduced the surface defects. Hydrophobicity suppressed the off-current and instability under negative bias stress because of the limited absorption of moisture on the oxide surface. Moreover, the ratio of metal–oxygen bonds increased, while the ratio of oxygen–hydrogen bonds decreased. The reduced action of hydrogen as a shallow donor induced improvements in the on/off ratio (from 5.5 × 103 to 1.1 × 107) and subthreshold swing (8.63 to V·dec−1 and 0.73 V·dec−1), producing ZTO TFTs with excellent switching characteristics. In addition, device-to-device uniformity was significantly improved because of the reduced defects in the LPTA-treated ZTO TFTs.

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Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors

Cited by 8 publications

References 26 publications

Enhancement of Electrical Characteristics and Stability of Amorphous Si-Sn-O Thin Film Transistors with SiOx Passivation Layer

Enhancement of Electrical Characteristics and Stability of Amorphous Si-Sn-O Thin Film Transistors with SiOx Passivation Layer

Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing

Improvement in Switching Characteristics and Bias Stability of Solution-Processed Zinc–Tin Oxide Thin Film Transistors via Simple Low-Pressure Thermal Annealing Treatment

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