Inducing a junction in n-type InxGa(1−x)N

Abstract

Temperature stability of high-resistivity GaN buffer layers grown by metalorganic chemical vapor deposition J. Vac. Sci. Technol. B 31, 051208 (2013) Discrepancies in the nature of nitrogen incorporation in dilute-nitride GaSbN and GaAsN films J. Vac. Sci. Technol. B 31, 051206 (2013) On the environmental stability of ZnO thin films by spatial atomic layer deposition J. Vac. Sci. Technol. A 31, 061504 (2013) Growth of high quality ZnO thin films with a homonucleation on sapphire J. Vac. Sci. Technol. B 31, 041206 (2013) Tin oxide atomic layer deposition from tetrakis(dimethylamino)tin and water