Two-dimensional topological insulators (2D TIs) have been proposed as platforms for many intriguing applications, ranging from spintronics to topological quantum information processing. Realizing this potential will likely be facilitated by the discovery of new, easily manufactured materials in this class. With this goal in mind we introduce a new framework for engineering a 2D TI by hybridizing graphene with impurity bands arising from heavy adatoms possessing partially filled d-shells, in particular osmium and iridium. First principles calculations predict that the gaps generated by this means exceed 0.2 eV over a broad range of adatom coverage; moreover, tuning of the Fermi level is not required to enter the TI state. The mechanism at work is expected to be rather general and may open the door to designing new TI phases in many materials.
PACS numbers:Topological insulators comprise a class of strongly spinorbit-coupled, non-magnetic materials that are electrically inert in the bulk yet possess protected metallic states at their boundary [1][2][3]. These systems are promising sources for a host of exotic phenomena-including Majorana fermions [4][5][6][7], charge fractionalization [8], and novel magneto-electric effects [9][10][11][12]-and may also find use for quantum computing [2] and spintronics devices [13]. In some respects twodimensional (2D) topological insulators are ideally suited for such applications; for example, bulk carriers that often plague their three-dimensional counterparts can be vacated simply by gating. Experimental progress on 2D topological insulators has steadily advanced recently due largely to pioneering work on HgTe [14-17] (see also Ref. [18]). Nevertheless, to realize their full potential systems more amenable to experimental investigations are highly desirable. In this regard the ability to design new 2D topological insulators from conventional, widely available materials would constitute a major step forward, and many proposals of this spirit now exist [19][20][21][22][23][24][25][26].Following this strategy, here we introduce a new mechanism for engineering a topological insulator state in graphene-arguably now the most broadly accessible 2D electron system. Historically, graphene was the first material predicted to realize a topological insulator in seminal work by Kane and Mele [1], though unfortunately the gap is unobservably small due to carbon's exceedingly weak spin-orbit coupling [27][28][29][30][31]. Reference [23] revived graphene as a viable topological insulator candidate by predicting that dilute concentrations of heavy In or Tl adatoms dramatically enhance the gap to detectable values of order 0.01 eV. Essentially, these adatoms mediate enhanced spin-orbit interactions of the type present in the Kane-Mele model [1] for pure graphene.Our approach here also relies on hybridizing graphene with dilute heavy adatoms, though the underlying physics is entirely different and can not be understood in terms of an effective graphene-only model. Rather, we will show using dens...