Inductance modelling of SWCNT bundle interconnects using partial element equivalent circuit method

Choudhary, Sudhanshu; Qureshi, S.

doi:10.1007/s10825-011-0360-0

Cited by 3 publications

(3 citation statements)

References 33 publications

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“…Therefore, it is claimed that the true speedup of the proposed MRA model is even greater than that reported in table 4. Furthermore, the MRA model of equation (35) can always be reused for any switching scenario by simply changing the selector matrix V s . On the other hand, because the user has no access to the internals of SPICE, for different switching scenarios, the entire MNA system of equations has to be resolved from the beginning.…”

Section: Resultsmentioning

confidence: 99%

“…Note that the values of the magnetic self and mutual inductances of the MTL network of figure 1(b) are generally three orders of magnitude smaller than the kinetic inductance values [29] and are thus neglected in L SS . However, the impact of magnetic inductance has to be considered if the bundle width is more than 120 nm [35]. Finally, the p.u.l.…”

Section: Esc Model Of Swcnt Networkmentioning

confidence: 99%

“…The far-end transient voltage response for the network shown in figure 1(b) can be mathematically expressed in the timedomain using equation (35) given below:…”

Section: Proposed Mra Model For Transient Analysismentioning

confidence: 99%

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Transient analysis of graphene-based on-chip interconnects using closed-form MRA model

Kumar¹,

Kaushik²

2021

Semicond. Sci. Technol.

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As interconnects in very-large-scale-integration technology shrinks into the sub-22 nm regime, carbon nanotubes, graphene nanoribbons (GNRs), and Cu-GNRs are emerging as potential replacements for conventional copper on-chip interconnects. This paper presents an matrix-rational-approximation (MRA) model for the fast transient analysis of graphene-based on-chip interconnects. The proposed model’s key feature is that it allows the mathematical representation of the transfer function matrix of on-chip graphene-based interconnect networks in the frequency-domain using closed-form rational functions. The network’s rational functions coefficients are derived from per-unit-length parameters and predetermined coefficients of the Padé approximation. The graphene-based network’s time-domain model is directly obtained from the rational function frequency-domain model without any numerical integration techniques. This makes the proposed MRA model more numerically efficient than conventional simulation program with integrated circuit emphasis (SPICE) models. The results obtained using the proposed model show less than 1% error when compared with HSPICE simulations, ensuring the proposed model’s excellent accuracy. A wide eye-height of 0.8137 V and eye-width of 219.87 ps are obtained for the eye-diagram analysis of multilayer graphene nanoribbon lines at 4 Gbps.

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Section: Resultsmentioning

confidence: 99%

Section: Esc Model Of Swcnt Networkmentioning

confidence: 99%

See 1 more Smart Citation

Transient analysis of graphene-based on-chip interconnects using closed-form MRA model

Kumar¹,

Kaushik²

2021

Semicond. Sci. Technol.

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Impact of Line Resistance Variations on Crosstalk Delay and Noise in Multilayer Graphene Nano Ribbon Interconnects

Sahoo

Rahaman

2014

2014 Fifth International Symposium on Electronic System Design

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Analysis of Crosstalk-Induced Effects in Multilayer Graphene Nanoribbon Interconnects

Sahoo

Rahaman

2017

J CIRCUIT SYST COMP

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Crosstalk effects in multilayer graphene nanoribbon (GNR) interconnects for the future nanoscale integrated circuits are investigated with the help of ABCD parameter matrix approach for intermediate- and global-level interconnects at 11[Formula: see text]nm and 8[Formula: see text]nm technology nodes. The worst-case crosstalk-induced delay and peak crosstalk noise voltages are derived for both neutral and doped zigzag GNR interconnects and compared to those of conventional copper interconnects. The worst-case crosstalk delays for perfectly specular, doped multilayer GNR interconnects are less than 4% of that of copper interconnects for 1[Formula: see text]mm long intermediate interconnects and less than 7% of that of copper interconnects for 5[Formula: see text]mm long global interconnects at 8[Formula: see text]nm node. As far as the worst-case peak crosstalk noise voltage is concerned, neutral GNR interconnects are slightly better performing than their doped counterparts. But from the perspective of overall noise contribution, doped GNR interconnects outperform neutral ones for all the cases. Finally, our analysis shows that from the signal integrity perspective, perfectly specular, doped multilayer zigzag GNR interconnects are a suitable alternative to copper interconnects for the future-generation integrated circuit technology.

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Inductance modelling of SWCNT bundle interconnects using partial element equivalent circuit method

Cited by 3 publications

References 33 publications

Transient analysis of graphene-based on-chip interconnects using closed-form MRA model

Transient analysis of graphene-based on-chip interconnects using closed-form MRA model

Impact of Line Resistance Variations on Crosstalk Delay and Noise in Multilayer Graphene Nano Ribbon Interconnects

Analysis of Crosstalk-Induced Effects in Multilayer Graphene Nanoribbon Interconnects

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