Abstract:Experimental devices in a deteriorated state were encountered after 168 hours of inductive operating life stress, (IOL) testing. A metal grain boundary breakdown mechanism was found during the analysis of the device, which was creating a low resistance current path between terminals. The AlSiCu top metal was breaking down along the grain boundaries. In addition there was alloying of the Aluminum into the underlying silicon. This alloying was creating a short to the gate, source, and drain. Several variations i… Show more
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