Inductively coupled plasma-assisted RF magnetron sputtering deposition of boron-doped microcrystalline Si films

Huang, Shiyong; Cheng, Qijin; Xu, Shuyan; Ostrikov, Kostya Ken

doi:10.1016/j.jallcom.2010.01.078

Cited by 7 publications

(11 citation statements)

References 38 publications

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“…Similar behavior has been observed for borondoped c-Si films deposited by HWCVD and PECVD [24,25]. The change of the preferential crystallographic growth direction is may ascribed to the combined effects of the surface energy, B-induced nucleation, lateral growth and etching [26,27]. The physical origin of this change in the preferential growth orientation is still unclear.…”

Section: Doping Seriessupporting

confidence: 62%

Investigation of p-type nanocrystalline silicon emitters for silicon heterojunction solar cells

Qiao

Xie

Hao

et al. 2015

Applied Surface Science

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Section: Doping Seriessupporting

confidence: 62%

Investigation of p-type nanocrystalline silicon emitters for silicon heterojunction solar cells

Qiao

Xie

Hao

et al. 2015

Applied Surface Science

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“…There are a variety of deposition techniques used to prepare lc-Si:H thin films, such as hot-wire chemical vapor deposition (HWCVD) [4,5], plasmaenhanced chemical vapor deposition (PECVD) [1,6] and magnetron sputtering [7][8][9]. The magnetron sputtering process is a good alternative because it has a capability for large area deposition and process controllability, and, especially, it is a safe process not using toxic and explosive gases [9,10].…”

Section: Introductionmentioning

confidence: 99%

“…The magnetron sputtering process is a good alternative because it has a capability for large area deposition and process controllability, and, especially, it is a safe process not using toxic and explosive gases [9,10]. Previous studies showed that lc-Si:H thin films can be obtained by frequency (RF) magnetron sputtering with a silicon target when the sputtering discharge is operated with the H 2 /Ar gas mixture [7][8][9]11]. And it was found that the growth and properties of lc-Si:H thin films would be influenced by deposition conditions such as substrate temperature, RF power, total pressure and partial hydrogen and argon dilution [7][8][9][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

“…Previous studies showed that lc-Si:H thin films can be obtained by frequency (RF) magnetron sputtering with a silicon target when the sputtering discharge is operated with the H 2 /Ar gas mixture [7][8][9]11]. And it was found that the growth and properties of lc-Si:H thin films would be influenced by deposition conditions such as substrate temperature, RF power, total pressure and partial hydrogen and argon dilution [7][8][9][11][12][13][14]. The substrate temperature is a crucial deposition condition for optimization of growth and properties of lc-Si:H thin films [14,15].…”

Section: Introductionmentioning

confidence: 99%

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Growth and properties of hydrogenated microcrystalline silicon thin films prepared by magnetron sputtering with different substrate temperatures

Wang

Huang

et al. 2015

Rare Met.

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Hydrogenated microcrystalline silicon (lcSi:H) thin films were deposited by an radio frequency (RF) (13.56 MHz) magnetron sputtering at different substrate temperatures (100-300°C), and the influences of substrate temperature on the growth and properties of lc-Si:H thin films were investigated. Surface roughness and crystallinity of the thin films increase as substrate temperature increases. And all thin films are at the transition region (X c = 49.2 %*61.0 %). The lc-Si:H thin films deposited at lower substrate temperature (B200°C) represent a weak (220) preferred orientation, while the thin films deposited at higher substrate temperature (C250°C) exhibit a weak (111) preferred orientation. The lc-Si:H thin films have a dense structure, and the structural compactness of the thin films slightly increases with substrate temperature increasing. The Fourier transform infrared spectroscopy (FT-IR) results indicate that the lc-Si:H thin films have a low hydrogen content (3.9 at%-5.6 at%), which is in favor of reducing light-induced degradation effect.

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“…Magnetron targets made of pure boron have been mainly used in semiconductor doping technology 17 as well as to deposit boron nitride films by reactive magnetron sputtering, when the pure boron target operates in a nitrogen atmosphere. 18 However, pure boron has very low electrical conductivity.…”

mentioning

confidence: 99%

Sputtering of pure boron using a magnetron without a radio-frequency supply

Окс

Anders

Nikolaev

et al. 2017

Review of Scientific Instruments

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Boron at room temperature is insulating and therefore conventionally sputtered using radiofrequency (RF) power supplies including their power-matching networks. In this contribution we show that through a suitable ignition assistance, via temporary application of a high voltage (~ 600 V) to the substrate holder or auxiliary electrode, the magnetron discharge can be ignited using a conventional mid-frequency power supply without matching network.Once the discharge is ignited, the assisting voltage can be reduced to less than 50 V, and after the boron target surface is at elevated temperature, thereby exhibiting sufficient conductivity, the assisting voltage can be turned off. The deposition of boron and boron nitride films has been demonstrated with a deposition rate of approximately 400 nm/h for a power of 250 W.

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Inductively coupled plasma-assisted RF magnetron sputtering deposition of boron-doped microcrystalline Si films

Cited by 7 publications

References 38 publications

Investigation of p-type nanocrystalline silicon emitters for silicon heterojunction solar cells

Investigation of p-type nanocrystalline silicon emitters for silicon heterojunction solar cells

Growth and properties of hydrogenated microcrystalline silicon thin films prepared by magnetron sputtering with different substrate temperatures

Sputtering of pure boron using a magnetron without a radio-frequency supply

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