Inductively coupled plasma etching of germanium tin for the fabrication of photonic components

Milord, Laurent; Aubin, J.; Gassenq, A.; Tardif, Samuel; Guilloy, Kévin; Pauc, N.; Rothman, J.; Chelnokov, A.; Hartmann, Jean‐Michel; Calvo, V.; Reboud, V.

doi:10.1117/12.2252280

Cited by 5 publications

(1 citation statement)

References 18 publications

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“…Secondly, the patterned samples were etched by two-step etching methods to fabricate partly suspended GeSn microstructures by different etch techniques. The nonselective wet (using etchant comprising of H 3 PO 4 :CH 3 COOH:HNO 3 :H 2 O in a weight ratio of 72:3:3:22 [21]) or dry (using a gas mixture of Cl 2 /N 2 /O 2 by inductively coupled plasma [27]) etching were first employed to define the pattern on a Ge 0.928 Sn 0.072 film, and then selective wet or dry etching was used to undercut the pattern of GeSn microstructures. It should be noted that the photoresist was removed from the samples before the selective dry etching but after the selective wet etching.…”

Section: Methodsmentioning

confidence: 99%

A comparative study of selective dry and wet etching of germanium–tin (Ge_1−xSn_x) on germanium

Song

Chi

et al. 2018

Semicond. Sci. Technol.

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A comparative study of selective dry and wet etching methods for germanium-tin (Ge 1−x Sn x ) alloys (3.5% < x < 7.7%) and germanium (Ge) is carried out. Both etching methods are optimized from the perspectives of selectivity and morphology, and then compared. A special behavior of the selective dry etching process is discovered and explained, whereby the selectivity has a dramatic increase to as high as 336 when the Sn concentration is above 6%. Different morphologies of suspended microstructures fabricated by different etching methods are investigated. Comparative study shows that the selective dry etching is a better choice for high Sn concentration GeSn (above 7%) against Ge to have better morphology, selectivity and verticality. While for low Sn concentration GeSn (below 6%), wet etching is a better way to fabricate a suspended GeSn microstructure on Ge. This work provides a comparative understanding of both methods of selective etching for GeSn. This comparative understanding is expected to be applied in the processing of next generation electronic and photonic devices.

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Section: Methodsmentioning

confidence: 99%

A comparative study of selective dry and wet etching of germanium–tin (Ge_1−xSn_x) on germanium

Song

Chi

et al. 2018

Semicond. Sci. Technol.

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Raman spectral shift versus strain and composition in GeSn layers with 6%–15% Sn content

Gassenq

Milord

Aubin

et al. 2017

Applied Physics Letters

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GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes an important challenge to improve GeSn devices. Strain micro-measurements are usually performed by Raman spectroscopy. However, different relationships linking the Raman spectral shifts to the built-in strain can be found in the literature. They were deduced from studies on low Sn content GeSn layers (i.e. xSn<8%) or on GeSiSn layers. In this work, we have calibrated the GeSn Raman relationship for really high Sn content GeSn binaries (6

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Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K

Reboud

Gassenq

Pauc

et al. 2017

Applied Physics Letters

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176

128

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Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 µm wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resulted from the use of higher Sn content GeSn layers of optimized crystalline quality, grown on graded Sn content buffers using Reduced Pressure CVD. The fabricated GeSn micro-disks with 13% and 16% of Sn showed lasing operation at 2.6 µm and 3.1 µm wavelengths, respectively. For the longest wavelength (i.e 3.1 µm), lasing was demonstrated up to 180 K, with a threshold of 377 kW/cm² at 25 K.

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Inductively coupled plasma etching of germanium tin for the fabrication of photonic components

Cited by 5 publications

References 18 publications

A comparative study of selective dry and wet etching of germanium–tin (Ge_1−xSn_x) on germanium

A comparative study of selective dry and wet etching of germanium–tin (Ge_1−xSn_x) on germanium

Raman spectral shift versus strain and composition in GeSn layers with 6%–15% Sn content

Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K

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Inductively coupled plasma etching of germanium tin for the fabrication of photonic components

Cited by 5 publications

References 18 publications

A comparative study of selective dry and wet etching of germanium–tin (Ge1−xSnx) on germanium

A comparative study of selective dry and wet etching of germanium–tin (Ge1−xSnx) on germanium

Raman spectral shift versus strain and composition in GeSn layers with 6%–15% Sn content

Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K

Contact Info

Product

Resources

About

A comparative study of selective dry and wet etching of germanium–tin (Ge_1−xSn_x) on germanium

A comparative study of selective dry and wet etching of germanium–tin (Ge_1−xSn_x) on germanium