Inductively coupled plasma etching of III–V antimonides in BCl3/SiCl4 etch chemistry

Swaminathan, K.; Janardhanan, Prakash E.; Sulima, O.V.

doi:10.1016/j.tsf.2008.05.029

Cited by 10 publications

(3 citation statements)

References 14 publications

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“…The third issue mentioned above is the steepness of the side wall, by increasing which can enhance the feedback effect of gratings to the optical field. In the case of high-order gratings with low coupling coefficient, this is an effective way to improve the mode selection ability [19] .…”

Section: Optimization Of Gratingsmentioning

confidence: 99%

High order DBR GaSb based single longitude mode diode lasers at 2 μm wavelength

et al. 2018

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The GaSb-based distributed Bragg reflection (DBR) diode laser with 23rd-order gratings have been fabricated by conventional UV lithography and inductively coupled plasma (ICP) etching. The ICP etching conditions were optimized and the relationship among etching depth, duty ratio and side-mode suppression ratio (SMSR) was studied. The device with a ridge width of 100 μm, gratings period of 13 μm and etching depth of 1.55 μm as well as the duty ratio of 85% was fabricated, its maximum SMSR reached 22.52 dB with uncoated cavity facets under single longitudinal operation mode at room temperature.

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Section: Optimization Of Gratingsmentioning

confidence: 99%

High order DBR GaSb based single longitude mode diode lasers at 2 μm wavelength

et al. 2018

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“…The development of infrared (IR) detection technology depends primarily on improvements in the InAs/GaSb SL epitaxy [1] and post-growth processing [2]. To achieve optimal performance, the device architecture [3] as well as the mesa structure must be optimized to have vertical and smooth sidewalls to prevent crosstalk in the focal plane arrays (FPAs) with small pixel pitches, where the aspect ratio of the perimeter to the surface area is high [2,4]. The roughness of the surface mesa, presence of the reaction products, and surface density of electrically active defects, including broken chemical bonds, can all affect the magnitude of the surface leakage current [5].…”

Section: Introductionmentioning

confidence: 99%

The use of one-component plasma in the icp-rie etching process of periodic structures for applications in photodetector arrays

Różycka,

Jasik,

Kozłowski

et al. 2023

Metrology and Measurement Systems

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The paper presents the effect of ICP-RIE etching time using one-component plasma on various parameters of an InAs/GaSb type II superlattice matrix. In the studies, two samples used at different BCl3 gas flow rates were compared and it was found that using a lower flow rate of 7 sccm results in obtaining a smoother sidewall morphology. Next, five periodic mesa-shaped structures were etched under identical conditions, but using a different time. The results indicated that the ICP-RIE method using a BCl3 flow rate of 7 sccm, ICP:RIE power ratio of 300W:270W allowed the ICP:RIE formation of a periodic mesa-shaped structure with smooth and perpendicular sidewalls.

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“…The most common recipes to etch the III-V semiconductor materials include Cl 2 ∕Ar and BCl 3 ∕Ar, where the inert gas Ar helps enhance the efficiency of etch product desorption by ion bombardment [18][19][20]. The Cl 2 ∕Ar recipe typically produces high etching rates, while the BCl 3 ∕Ar recipe produces much smoother surfaces with vertical sidewalls [21,22]. Hence the gas mixture flow ratio of BCl 3 ∕Ar was chosen in this work to fabricate the disk cavities.…”

mentioning

confidence: 99%

InAsSb/InAsPSb multiple quantum well disk cavities with pedestal structures on a GaSb substrate for mid-infrared whispering-gallery-mode emission beyond 4 μm

Lin

Mao

et al. 2015

Opt. Lett.

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The mid-infrared whispering-gallery-mode disk cavities with InAs0.85Sb0.15/InAs0.53P0.23Sb0.24 multiple quantum wells active medium on a GaSb substrate were fabricated. For this material system in the mid-infrared range, fabrication techniques were developed to form the disk cavity structure. The smooth sidewalls of the disk cavities were achieved by appropriate gas mixture flow ratio of BCl3/Ar in the inductively coupled plasma-reactive ion etching. In addition, selective wet etching technique was used to form the pedestal of the disk cavity using dilute hydrofluoric acid with good selectivity. For efficient confinement of the whispering gallery modes along the radial direction, the extent of the lateral etching was carefully controlled. The processed 30-μm-diameter disk cavities were optically pumped, and the whispering gallery modes with wavelengths around 4.1 μm can be observed up to 90 K.

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Inductively coupled plasma etching of III–V antimonides in BCl3/SiCl4 etch chemistry

Cited by 10 publications

References 14 publications

High order DBR GaSb based single longitude mode diode lasers at 2 μm wavelength

High order DBR GaSb based single longitude mode diode lasers at 2 μm wavelength

The use of one-component plasma in the icp-rie etching process of periodic structures for applications in photodetector arrays

InAsSb/InAsPSb multiple quantum well disk cavities with pedestal structures on a GaSb substrate for mid-infrared whispering-gallery-mode emission beyond 4 μm

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