2017
DOI: 10.1016/j.carbon.2017.02.067
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Inductively coupled remote plasma-enhanced chemical vapor deposition (rPE-CVD) as a versatile route for the deposition of graphene micro- and nanostructures

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Cited by 20 publications
(11 citation statements)
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“…In the inductively coupled plasma (ICP) deposition, the ionized gas is obtained by coupling the electromagnetic field produced by a coil within the reaction chamber without the need for paired electrodes (Cuxart et al, 2017). The radiofrequency (RF)-ICP is a thermal plasma system which can perform thin films deposition in a wide variety of environments, such as oxidizing, reducing, inert, and many more reactive atmospheres (Cuxart et al, 2017).…”
Section: Inductively Coupled Plasmamentioning
confidence: 99%
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“…In the inductively coupled plasma (ICP) deposition, the ionized gas is obtained by coupling the electromagnetic field produced by a coil within the reaction chamber without the need for paired electrodes (Cuxart et al, 2017). The radiofrequency (RF)-ICP is a thermal plasma system which can perform thin films deposition in a wide variety of environments, such as oxidizing, reducing, inert, and many more reactive atmospheres (Cuxart et al, 2017).…”
Section: Inductively Coupled Plasmamentioning
confidence: 99%
“…In the inductively coupled plasma (ICP) deposition, the ionized gas is obtained by coupling the electromagnetic field produced by a coil within the reaction chamber without the need for paired electrodes (Cuxart et al, 2017). The radiofrequency (RF)-ICP is a thermal plasma system which can perform thin films deposition in a wide variety of environments, such as oxidizing, reducing, inert, and many more reactive atmospheres (Cuxart et al, 2017). It is worth noting that ICP-PECVD configuration allows an extremely high purified environment appropriate for the synthesis of nanomaterials requiring accurate control of morphology and chemistries (Cuxart et al, 2017).…”
Section: Inductively Coupled Plasmamentioning
confidence: 99%
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“…Another important parameter in ICP CVD is the pressure that influences the plasma energy, formation of active species and VOG growth process, which is not simply proportional to the pressure or gas flow rate because of the complex plasma chemistry process [66]. In addition, the higher substrate temperature enhances the surface reaction kinetics by increasing the nucleation sites on both the substrate and the as-grown VOG layers [67].…”
Section: Introductionmentioning
confidence: 99%
“…В то же время непосредственное воздействие плазмы может привести к образованию высокой плотности дефектов [8] в формируемых пленках и образованию вертикальных углеродных структур за счет собственного электрического поля [5]. Уменьшить образование дефектов и устранить вертикальный рост позволяет метод удаленного плазмо-химического осаждения, в котором реакционные камеры плазменной системы и установки ОГФ пространственно разделены, но совмещены потоки газов [9]. С другой стороны, такое совмещение усложняет установку для получения графена и увеличивает его стоимость.…”
Section: Introductionunclassified