Industrial MHEMT Technologies for 80 - 220 GHz Applications

Smith, Derek R.; Dambrine, G.; Orlhac, J.-C.

doi:10.1109/emicc.2008.4772267

Cited by 11 publications

(14 citation statements)

References 3 publications

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“…Good results have been demonstrated by IAF [9] and OMMIC [10] at ambient temperature. Possible applications of this technology to cryogenic applications and particularly to radio astronomy are currently being studied.…”

Section: Hybrid Versus Integrated Amplifierssupporting

confidence: 60%

Amplification system of ALMA Band 1

et al. 2010

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Section: Hybrid Versus Integrated Amplifierssupporting

confidence: 60%

Amplification system of ALMA Band 1

et al. 2010

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“…A 110 GHz LNA design made in IHP's 0.13 μm SiGe BiCMOS technology with 20 dB of gain/4 dB NF, thus approaching the RF performance of some III-V based W-band LNAs [1,8], was recently reported [9]. Such results further indicate that silicon based switched receivers with several dBs of improvement in NF (NF = 4-5 dB) could be feasible at W-band.…”

Section: Introductionmentioning

confidence: 90%

SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers

Reyaz

Malmqvist

Gustafsson

et al. 2015

IET Microwaves, Antennas & Propagation

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This study presents the results of a high-gain and wideband differential intermediate frequency (IF) amplifier circuit design for a W-band passive imaging single-chip (down-conversion) receiver front-end. The cascaded two-stage IF amplifier was fabricated in a 0.13 μm SiGe BiCMOS process technology with 300 GHz/500 GHz f T /f max . In total six on-chip inductors are used in the input, output and inter-stage matching networks which enable relatively broadband RF properties together with a compact circuit size for the IF amplifier (the die area is 0.27 mm 2 incl. RF and DC pads). The broadband SiGe amplifier has a measured gain of 10-19.5 dB at 2-37 GHz (|s 11 | and |s 22 | ≤ −10 dB at 7-40 GHz and 8-35 GHz, respectively), noise figure of 6.3-8.0 dB at 2-26 GHz and output third order intercept points of 7-17 dBm at 1-40 GHz (the DC power consumption is 122 mW). To the authors' best knowledge, this work reports a first-time realisation of a differential IF amplifier made in a 0.13 μm SiGe BiCMOS technology that achieves such wideband impedance matching together with a high gain and reasonably low noise properties over a wide instantaneous bandwidth (|s 21 | = 15-19.5 dB at 3-26 GHz).

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“…The advantage of the antenna with a varactor over a diode or a switch is the continuous steering capability. There are several formats of ESPAR antenna including wire antenna arrays (monopole, dipole) [1][2][3], patch antennas with wire reflectors [4,5], or planar patch antenna arrays [6][7][8]. Among these ESPAR antenna configurations, a few publications come with a model that can help understand the steering…”

Section: Received 1 July 2014mentioning

confidence: 99%

“…To push the performance of silicon based radiometers further beyond the current state-of-the-art we are considering a potential use of low-loss radio frequency-Microelectronic system (RF-MEMS) switches developed by the SiGe foundry IHP (with 0.5 dB of losses up to 140 GHz) [7]. A 110 GHz LNA design made in IHP's 0.13 mm SiGe BiCMOS technology with 20 dB of gain/4 dB NF, thus, approaching the RF performance of some III-V based W-band LNAs [1,8], was recently reported [9]. Such results indicate that silicon based switched receivers with 5 dB improvement in NF could be feasible at W-band.…”

Section: Introductionmentioning

confidence: 99%

A W‐band power detector RFIC design in 0.13 μm SiGe BiCMOS process

Jönsson

Reyaz

Malmqvist

et al. 2014

Micro & Optical Tech Letters

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This article presents the results of a wideband power detector radio frequency integrated circuit design intended for W-band passive imaging sensors. The power detector was fabricated in a 0.13 mm SiGe BiCMOS process technology with 300 GHz/500 GHz f T /f max . The experimental results show broadband RF properties such as a responsivity of 40-60 kV/W and a noise equivalent power (NEP) of 0.3-0.4 pW/Hz 1/2 at 70-95 GHz, respectively (the DC power consumption is 225 mW). To the authors' best knowledge, the SiGe detector design reports the widest s 11 210 dB bandwidth (s 11 210 dB at 79-102 GHz) among silicon based W-band power detectors and is competitive with InP-based W-band detectors in terms of a higher responsivity and similar NEP.

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Industrial MHEMT Technologies for 80 - 220 GHz Applications

Cited by 11 publications

References 3 publications

Amplification system of ALMA Band 1

Amplification system of ALMA Band 1

SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers

A W‐band power detector RFIC design in 0.13 μm SiGe BiCMOS process

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