Industry perspective on power electronics for electric vehicles

Tu, Chang-Ching; Hung, Chia-Lung; Hong, Kuo-Bin; Elangovan, Surya; Yu, Wei-Chen; Hsiao, Yu-Sheng; Lin, Wei-Cheng; Kumar, Rustam; Huang, Zhen-Hong; Hong, Yu-Heng; Hsiao, Yi-Kai; Horng, Ray-Hua; Tsui, Bing-Yue; Wu, Tian-Li; He, Jr-Hau; Kuo, Hao-Chung

doi:10.1038/s44287-024-00055-4

Nat Rev Electr Eng

2024

DOI: 10.1038/s44287-024-00055-4

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Industry perspective on power electronics for electric vehicles

Chang-Ching Tu,

Chia-Lung Hung,

Kuo-Bin Hong

et al.

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Cited by 4 publications

References 96 publications

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Revealing Self‐Driven Broadband Photodetection Using Heterojunction of Bi₂Se₃ and Low‐Temperature Laser Molecular Beam Epitaxy Grown GaN on SrTiO₃ (100) Substrate

Aggarwal,

Kumar,

Gautam

et al. 2024

Adv Materials Technologies

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Optoelectronic properties of GaN are underexplored on good lattice matching SrTiO3 (STO) due to STO's instability at the high GaN growth temperatures (800–1100 °C) required by traditional techniques. Here, GaN is grown on STO (100) at lower temperatures (500, 600, and 700 °C) using the laser‐assisted molecular beam epitaxy (LMBE) technique, and their morphological, crystalline, optical, and photodetection properties are analyzed. Further, heterojunction of Bi2Se3 thin film (bandgap of 0.3 eV) is formed on the highest photo‐responsive LMBE‐GaN/STO to fabricate a self‐powered broadband photodetector. The fabricated self‐powered heterojunction photodetectors device exhibits a high responsivity of 2.93 × 102 mAW−1 in ultraviolet region and a notable responsivity of 2.3 and 12 mAW−1 in visible and near‐infrared spectral regions, respectively. In addition, photoresponse properties of fabricated devices on bare LMBE‐GaN and its heterojunction are compared under UV light illumination. The photoresponsivity of heterojunction in UV region is estimated to be 3.05 × 104 mAW−1, which is enhanced by 100% compared to bare LMBE‐GaN. Combining the unique optoelectronic properties of GaN and rigidity of STO, epitaxy of GaN on STO enables construction of robust photodetector devices. Further, Bi2Se3‐functionalized GaN can provide self‐sufficient and high‐quality futuristic optoelectronics devices.

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Revealing Self‐Driven Broadband Photodetection Using Heterojunction of Bi₂Se₃ and Low‐Temperature Laser Molecular Beam Epitaxy Grown GaN on SrTiO₃ (100) Substrate

Aggarwal,

Kumar,

Gautam

et al. 2024

Adv Materials Technologies

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Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga₂O₃ Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices

Chou,

Tran,

Peelaers

et al. 2024

Adv Elect Materials

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In this work, the out‐diffusion and uphill‐diffusion of Mg inside (100) β‐Ga2O3 epilayers and substrates are reported. The Mg accumulates toward the (100) surface upon annealing under an oxidizing environment, whereas the concentration profile changes with annealing temperatures and durations. Furthermore, the out‐diffusion of Mg from the substrate into the epilayer is observed at temperatures above 800 °C, which continues during the film growth. The substitutional‐interstitial‐diffusion (SID) mechanism is suggested to be the driving mechanism for the former, and the latter is related to the diffusion of mobile Mg interstitials. The accumulation profile of Mg can be used to identify the interface between the epilayer and the substrate. Furthermore, significant differences in device performance are observed for power transistors fabricated on annealed and non‐annealed epitaxial β‐Ga2O3 wafers. Increased breakdown voltages of annealed samples are attributed to the Mg diffusion into the first few nanometers of the epitaxial layer close to the interface to the semi‐insulating substrate, leading to compensation of residual dopants (donors) in that region.

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Characterization and modeling of the mobility, threshold voltage, and subthreshold swing in p-GaN gate HEMTs at cryogenic temperatures

Singh,

Ngo,

et al. 2024

Applied Physics Letters

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This study presents a comprehensive investigation of the electrical properties of p-GaN gate HEMT devices under cryogenic operations, spanning a temperature range from 300 K all the way down to 10 K. We report achievement of a low sub-60 mV/dec sub-threshold swing (SS) (33.2 mV/dec at 10 K), a high ION/IOFF ratio (∼3.5 × 1010 at 10 K), and a remarkable ID,max (∼358 mA/mm at 10 K) in p-GaN gate HEMTs operating under cryogenic conditions. Furthermore, the mobility, threshold voltage shifts, and SS characteristics at cryogenic temperatures are modeled in p-GaN HEMTs. In summary, p-GaN gate HEMTs are promising for cryogenic applications due to their low SS, high gm,max, impressive ION/IOFF ratio, and substantial ID,max. Furthermore, the modeling achieved in this work can pave the way for future characteristic prediction in p-GaN HEMTs at cryogenic temperatures.

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Industry perspective on power electronics for electric vehicles

Cited by 4 publications

References 96 publications

Revealing Self‐Driven Broadband Photodetection Using Heterojunction of Bi₂Se₃ and Low‐Temperature Laser Molecular Beam Epitaxy Grown GaN on SrTiO₃ (100) Substrate

Revealing Self‐Driven Broadband Photodetection Using Heterojunction of Bi₂Se₃ and Low‐Temperature Laser Molecular Beam Epitaxy Grown GaN on SrTiO₃ (100) Substrate

Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga₂O₃ Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices

Characterization and modeling of the mobility, threshold voltage, and subthreshold swing in p-GaN gate HEMTs at cryogenic temperatures

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Industry perspective on power electronics for electric vehicles

Cited by 4 publications

References 96 publications

Revealing Self‐Driven Broadband Photodetection Using Heterojunction of Bi2Se3 and Low‐Temperature Laser Molecular Beam Epitaxy Grown GaN on SrTiO3 (100) Substrate

Revealing Self‐Driven Broadband Photodetection Using Heterojunction of Bi2Se3 and Low‐Temperature Laser Molecular Beam Epitaxy Grown GaN on SrTiO3 (100) Substrate

Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices

Characterization and modeling of the mobility, threshold voltage, and subthreshold swing in p-GaN gate HEMTs at cryogenic temperatures

Contact Info

Product

Resources

About

Revealing Self‐Driven Broadband Photodetection Using Heterojunction of Bi₂Se₃ and Low‐Temperature Laser Molecular Beam Epitaxy Grown GaN on SrTiO₃ (100) Substrate

Revealing Self‐Driven Broadband Photodetection Using Heterojunction of Bi₂Se₃ and Low‐Temperature Laser Molecular Beam Epitaxy Grown GaN on SrTiO₃ (100) Substrate

Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga₂O₃ Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices