2007
DOI: 10.1016/j.apsusc.2007.02.002
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Inelastic electron scattering and energy-selective negative ion reactions in molecular films on silicon surfaces

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Cited by 11 publications
(9 citation statements)
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“…The physics of electron impact on molecular targets (here symbolized by AB) is nowadays rather well-described on a theoretical point of view (see Figure 2) [72]. However, the complete set of cross-sections associated to the different interactions of secondary electrons with large molecules like PADC still remains unknown.…”
Section: Physical Stagementioning
confidence: 99%
“…The physics of electron impact on molecular targets (here symbolized by AB) is nowadays rather well-described on a theoretical point of view (see Figure 2) [72]. However, the complete set of cross-sections associated to the different interactions of secondary electrons with large molecules like PADC still remains unknown.…”
Section: Physical Stagementioning
confidence: 99%
“…Figure 13 also shows that there is a small peak around 18 eV, an energy that seems to be too high for dissociative electron attachment, which usually occurs below 12-15 eV. 23 The peak is unlikely to be due to dipolar dissociation or direct electron impact ionization, which are nonresonant scattering processes and show a smooth increase in tot above a threshold energy between 10 and 20 eV. 24 A possible explanation is that this peak is caused by a resonant process involving SEs generated by the interaction of the PEs with the substrate.…”
Section: E Influence Of Incident Electron Energy On the Total Reactimentioning
confidence: 99%
“…44 Nonetheless, using gas phase cross sections is a valid approach, in order to elucidate the different processes occurring at the surface (for a review on the subject, see Ref. 45), and DI cross sections have been successfully adapted for use in MC simulations (e.g., see Refs. 29 and 27).…”
Section: No]mentioning
confidence: 99%