Inelastic Light Scattering from Semiconductors

We report on the experimental and theoretical study of the near infrared inelastic electronic light scattering of the most promising high-efficiency tandem concentrator solar cells device structures based on n-and p-type GaAs, InP, InGaAs, and InGaAsP, grown by LPE. We show that the scattering mechanisms associated with charge-, spin-, and momentum-density fluctuations of free electron gas are represented by different line shapes and occurred in corresponding concentration ranges. New approach to the problem and observed results provide clear evidence that the sensitivity of the developed measurements in solar cell semiconductor structures provide a unique opportunity for their characterization and optimization.

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Near infrared inelastic light scattering spectroscopy of high efficiency solar cells device structures based on III-V compounds

Bairamov

Ipatova

Negoduyko

et al.

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and

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Inelastic Light Scattering from Semiconductors

Cited by 1 publication

References 177 publications

Near infrared inelastic light scattering spectroscopy of high efficiency solar cells device structures based on III-V compounds

Near infrared inelastic light scattering spectroscopy of high efficiency solar cells device structures based on III-V compounds

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