2015
DOI: 10.1134/s1063783415080090
|View full text |Cite
|
Sign up to set email alerts
|

Inelasticity and precipitation of germanium from a solid solution in Al-Ge binary alloys

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

2
0
0

Year Published

2016
2016
2021
2021

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(2 citation statements)
references
References 6 publications
2
0
0
Order By: Relevance
“…Under all Sn precursor partial pressure flows, small Sn-rich precipitates and Sn-rich planar coherent defects are seen in the Ge 1– x Sn x shell region (Figures and ). Similar coherent Sn defects have previously been reported in both Si and Ge crystals. The small precipitates can be distinguished by the Moiré fringes in the TEM image, and EDS shows Sn compositions greater than 50 at. % in the precipitates (Figure a, b).…”
supporting
confidence: 78%
See 1 more Smart Citation
“…Under all Sn precursor partial pressure flows, small Sn-rich precipitates and Sn-rich planar coherent defects are seen in the Ge 1– x Sn x shell region (Figures and ). Similar coherent Sn defects have previously been reported in both Si and Ge crystals. The small precipitates can be distinguished by the Moiré fringes in the TEM image, and EDS shows Sn compositions greater than 50 at. % in the precipitates (Figure a, b).…”
supporting
confidence: 78%
“…The Sn-rich coherent defects are not observed in XRD. Consistent with the TEM analysis showing a coherent interface with the surrounding Ge 1– x Sn x , this suggests that these defects have the same crystallographic registry as the surrounding material; the defects occupy too small a volume fraction compared to the rest of the epitaxial Ge/Ge 1– x Sn x core-shell nanowires to be detected using lab-source XRD. Sn-rich precipitates observed on the surface of the nanowires in TEM also are not detected in XRD.…”
supporting
confidence: 75%