Influence mechanism of Ni2O3 doping on leakage current of SnO2 varistor ceramics
Fei Sun,
Hongfeng Zhao,
Kui Miao
Abstract:The doping of Ni2O3 has significantly enhanced the electrical properties and density of SnO2–Co3O4–Cr2O3–Nb2O5 varistor ceramics. The leakage current density is reduced to 4.73 µA/cm2, the nonlinear coefficient is 37, and the voltage gradient is 549 V/mm. The undoped varistor ceramics exhibited a considerably higher leakage current of 48.04 µA/cm2. The performance improvement comes from alterations in grain boundary parameters. The doping of an appropriate amount of Ni improves the grain boundary barrier of Sn… Show more
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