Influence of Additional Insulation Block on Melt-Crystal Interface Shape in Directional Solidification System for Growing High Quality mc-Silicon Ingot: a Simulation Investigation

Anbu, G.; Nagarajan, S. G.; Aravindan, G.; Srinivasan, M.; Ramasamy, P.

doi:10.1007/s12633-020-00572-5

Cited by 6 publications

(3 citation statements)

References 17 publications

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“…The concave melt crystal interface pushes the impurities towards the center of the ingot, the convex melt-crystal interface pushes the impurities away from the center of the ingot and the flat melt-crystal interface maintains the horizontally uniform impurity concentration. [82][83][84] Figure 9 Shows the melt-crystal interface and the impurity distribution.…”

Section: Melt-crystal Interfacementioning

confidence: 99%

A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications

Sekar,

Thamotharan,

Manickam

et al. 2023

Cryst. Res. Technol.

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Crystalline silicon (c‐Si) solar cells have been accepted as the only environmentally and economically acceptable alternative source to fossil fuels. The majority of commercially available solar cells of all Photovoltaic (PV) cells produced worldwide, are made of crystalline silicon. Due to their excellent price/performance ratio and their demonstrated ecological durability, crystalline silicon wafers are by far the most common absorber material used in the production of solar cells and modules today. These wafers are primarily made using either a directional solidification that produces large‐grained multi‐crystalline (mc‐Si) wafers with a greater defect density or a solar‐optimized Czochralski (Cz) growing method that produces crystalline silicon with low defect density (c‐Si). The grown crystalline wafer contains foreign atoms that enhance the wire saw damage, reduce the minority carrier lifetime as a result get the minimum conversion efficiency of the solar cells. The current review illustrates how the elements of the furnace system affect impurity production and distribution of the developed silicon ingot and how the growth process affects the chemical reaction. Additionally, it covers the outcomes of simulations and experiments conducted on the growing process of c‐Si and mc‐Si ingots and recommends the most appropriate processing parameters, geometrical system, and argon gas flow rate.

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Section: Melt-crystal Interfacementioning

confidence: 99%

A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications

Sekar,

Thamotharan,

Manickam

et al. 2023

Cryst. Res. Technol.

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“…The design of the temperature eld of directional solidi cation in a furnace is mainly focused on structure and process optimization. The researches on structure optimization are mainly aimed at the heat insulation block near the side of crucible [11][12][13] , insulation cage at the side or bottom of the crucible [6,14,15] , the heaters [16] , quartz crucible [17][18][19] , and bottom grille [20] , etc. The researches on process optimization are mainly aimed at heater power [21,22] , the rate of the crucible movement [23] , etc.…”

Section: Introductionmentioning

confidence: 99%

Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process

Guan

et al. 2022

Silicon

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The temperature eld distribution during the growth of crystalline silicon by the directional solidi cation (DS) method is an important factor affecting the growth rate, the shape of the melt-crystal (m-c) interface, and thermal stress. To solve the problem of m-c interface convexity at the early stage of crystal growth caused by supercooling at the bottom center of silicon ingot during DS. In this paper, a two-dimensional global transient numerical model based on a large-size ALD-G7 (G7) crystalline silicon ingot furnace is established and experimentally veri ed. Based on the model, the in uence of different bottom thermal gate moving process curves on the convexity of the m-c interface at the early stage was studied, with emphasis on the changes in temperature eld, m-c interface, and thermal stress at the early stage of crystal growth. We have designed three cases, case 1 uses the original moving process curve of bottom thermal gate, case 2 and case 3 adjust the process curve to 0.95 and 0.9 of the original ratio, respectively.The numerical results show that the center cooling condition of silicon ingot and the convexity of the m-c interface are improved with the decreasing of thermal gate moving rate. Compared with case 1, the convexity of case 2 and case 3 is reduced by 55% and 44% on average, respectively.

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“…[2] Additional block was added in the hot-zone of the DS furnace and its position was also analyzed to achieve a slightly convex interface shape. [8,9] Partition block position and size were analyzed by Yu et al This partition block prevents the seed melting. By altering the dimension of the block, the temperature gradient and convexity are altered.…”

Section: Introductionmentioning

confidence: 99%

Numerical Investigation of Cone Shape Grooved DS Block to Improve the mc–Si Ingot Quality

Aravindan¹,

Manikam²,

Perumalsamy³

2021

Crystal Research and Technology

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Multicrystalline silicon solar cells occupy 62% in crystalline silicon solar cell production. It is grown by the directional solidification process. Solidification control has a vital role in directional solidification process. Cone shape groove is made in the directional solidification block to enhance the outgoing heat flux in the center region than the peripheral region. Five directional solidification furnaces are simulated for making a multicrystalline silicon ingot. First furnace is the conventional furnace, the second furnace has 30 mm × 85 mm groove block, the third furnace has 40 mm × 85 mm groove block, the fourth furnace has 50 mm × 85 mm groove block and the fifth furnace has 60 mm × 85 mm groove block. The von Mises stress in the maximum volume of the conventional and modified grown ingots are below the range of critical value. In conventional case 7% of the ingot volume is above critical stress value and in the modified cases 2.5% of the ingot volume is above critical stress value. If axial and radial temperature gradient is combined in the 50 mm × 85 mm groove block leads to better results.

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Influence of Additional Insulation Block on Melt-Crystal Interface Shape in Directional Solidification System for Growing High Quality mc-Silicon Ingot: a Simulation Investigation

Cited by 6 publications

References 17 publications

A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications

A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications

Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process

Numerical Investigation of Cone Shape Grooved DS Block to Improve the mc–Si Ingot Quality

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