In this paper, pure and 3% Ni-doped Copper oxide (CuO) thin films were grown by the ultrasonic spray pyrolysis (USP) method on In2O3/SnO2 (ITO) covered glass substrates. The X-ray diffraction (XRD) analysis revealed that the pure and 3% Ni-doped CuO thin films were polycrystalline structure with tenorite phase in the preferential orientation (111). The scanning electron microscope (SEM) and atomic force microscopy (AFM) images demonstrated morphological properties in the grown pure and 3% Ni-doped CuO thin films. The energy dispersive X-ray analysis (EDX) measurements revealed that the deposited thin films were successfully grown at the correct stoichiometry. The electrochemical behavior of the pure and 3% Ni-doped CuO thin films was analyzed by the cyclic voltammetry (CV), galvanostatic charge/discharge (GCD), and electrochemical impedance spectroscopy (EIS) techniques. The specific capacity value of the pure and 3% Ni-doped CuO electrodes calculated from the charge/discharge plots was calculated as 31 F/g and 869 F/g at 1 A/g current density, respectively. From the EIS parameters of the pure CuO semiconductor material, the solution resistance (Rs), the polarization resistance (Rp), a constant phase element (CPEdl), and CPE exponent (n) were calculated as 849.1 Ω.cm2, 517.5x103 Ω.cm2, 86.76x10-6 Ω-1 s.cm-2, and 0.886, respectively. Also, Rs, Rp, CPEdl, and n were calculated as 1.585 Ω.cm2, 1.631x106 Ω.cm2, 30.56x10-6 Ω-1.s.cm-2 and 0.920 in after Ni-doped, respectively.