Influence of air humidity on the low-frequency capacitance of silicon MOS structures with a nanoscale oxide layer

Fastykovsky, Pavel P.

doi:10.1016/j.snb.2019.127318

Cited by 3 publications

(1 citation statement)

References 15 publications

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“…С другой стороны, чувствительность МДП-структур к присутствию влаги потенциально может быть использована для создания на их основе датчиков влажности. Наблюдалось экспериментально влияние влажности воздуха на емкость МОП структур Mo−SiO 2 −NN + Si(111) с тонким пористым оксидом толщиной ∼ 5 нм [6]. Предложен очень чувствительный датчик на основе полевого МОП транзистора, в котором используется изменение проводимости поверхности диоксида кремния при изменении влажности среды [7].…”

Section: Introductionunclassified

Изменение Параметров Мдп-Структур С Соединениями Редкоземельных Элементов В Условиях Повышенной Влажности

Шалимова¹,

Белянина²

2023

Физика И Техника Полупроводников

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The properties of MIS structures with yttrium, neodymium, samarium fluorides on germanium, neodymium and samarium fluorides on n and p silicon substrates, as well as Al-Y2O3-nSi, Al-Y2O3-pSi structures under conditions of high ambient humidity were studied. Additionally, the structures were exposed to an electric field of ~ 0.5 – 4 MV/cm. For MIS structures with films of yttrium, neodymium, and samarium fluoride on germanium, as well as neodymium and samarium fluoride on n and p silicon substrates, a clear increase in the maximum specific capacitance with increasing relative humidity of the medium is observed. It has been found that the incorporation of water into the structure of the REE film fluorides studied in this work is sorption and does not cause irreversible changes in the dielectric film at the studied temperatures.

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Section: Introductionunclassified