2020
DOI: 10.1016/j.pnsc.2020.01.006
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Influence of Al doping on the crystal structure, optical properties, and photodetecting performance of ZnO film

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Cited by 60 publications
(15 citation statements)
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“…Under illumination, the higher current was measured relative to the dark for both films due to the additional carriers generated under illumination. The observed trend at the dark and under illumination like to those reported for the ZnO film deposited using DC-unbalanced magnetron sputtering (DC-UBMS) with silver as the metal contact measured under UV light irradiation [28]. Furthermore, the enhancement of the photocurrent with the presence of dye is higher than that without dye because dye absorbs visible light while ZnO only absorbs only UV light under irradiance of solar simulator, so the visible light-excited carriers in dye are then transferred to the conduction band of ZnO.…”
Section: Resultssupporting
confidence: 81%
“…Under illumination, the higher current was measured relative to the dark for both films due to the additional carriers generated under illumination. The observed trend at the dark and under illumination like to those reported for the ZnO film deposited using DC-unbalanced magnetron sputtering (DC-UBMS) with silver as the metal contact measured under UV light irradiation [28]. Furthermore, the enhancement of the photocurrent with the presence of dye is higher than that without dye because dye absorbs visible light while ZnO only absorbs only UV light under irradiance of solar simulator, so the visible light-excited carriers in dye are then transferred to the conduction band of ZnO.…”
Section: Resultssupporting
confidence: 81%
“…On the other hand, the other blue emission at ∼2.77 eV (447.75 nm) was assigned to the ionized zinc interstitial (Zn i − ). 132,133,137 Furthermore, the blue emission at ∼2.89 eV (428.1 nm) and the violet emission at ∼3.01 eV (411.7 nm), which were respectively attributed to the electronic transition signature from Zn i to V Zn states 138,139 and an interstitial zinc vacancy (Zn i ), 132,140,141 were observed for the ZnO nanoparticles calcined at 400 and 600 °C. The blue-green band component of the emission at around 2.55− 2.57 eV (∼485−482 nm), which is generally associated with different surface-related defects such as oxygen vacancies or zinc interstitials, 142,143 was also considered, and it was found only to be present for samples calcined at 400, 600, and 700 °C.…”
Section: Resultsmentioning
confidence: 95%
“…The electron concentration of the ZnO:Al thin film was higher than that of the pristine ZnO thin film. Moreover, the electron concentrations of the extrinsically doped thin films were higher than that of the undoped ZnO thin film due to the presence of shallow, effective-masslike donors and the increase in the oxygen vacancy concentration [27,28]. The decrease in electrical resistivity was attributed to the increase in the electron concentration.…”
Section: Resultsmentioning
confidence: 98%
“…Since extrinsic dopants of Al and B have higher valences and smaller ionic radii than those of the host cation of Zn, extrinsic dopants substitute into host cation sites would create a free electron [29]. In addition, each Al 3+ and B 3+ ion is bound with O 2− ions and provides one excess electron, leading to an increase of electron concentration and pushing the Fermi energy level (E F ) shift toward the conduction band (CB) [28]. Measured results showed that the electron concentration rose from 6.51 × 10 14 cm −3 to 1.55 × 10 15 cm −3 in the ZnO:Al thin film doped with 1% B.…”
Section: Resultsmentioning
confidence: 99%