Influence of Al-doping on the structure and optical properties of ZnO films

Ding, Jijun; Ma, S.Y.; Chen, H.X.; Shi, Xun; Zhou, Ting; Mao, Liang

doi:10.1016/j.physb.2009.05.006

Cited by 57 publications

(18 citation statements)

References 23 publications

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“…The optical band-gap of ZnO and ZnO:Al thin film was presented in Figure 7. The ZnO:Al thin films had bigger optical band-gap than pure ZnO thin film; the same result has been obtained by some papers [32][33][34][35]. The increase of band-gap was caused by the Moss-Burstein effect [36].…”

Section: Optical Propertiessupporting

confidence: 74%

Rootlike Morphology of ZnO:Al Thin Film Deposited on Amorphous Glass Substrate by Sol-Gel Method

Sutanto

Durri

Wibowo

et al. 2016

Physics Research International

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Zinc oxide (ZnO) and aluminum doped zinc oxide (ZnO:Al) thin films have been deposited onto a glass substrate by sol-gel spray coating method at atmospheric pressure. X-ray diffractometer (XRD), scanning electron microscopy (SEM), and UV-Vis spectrophotometer have been used to characterize the films. XRD spectra indicated that all prepared thin films presented the wurtzite hexagonal structure. SEM images exhibited rootlike morphology on the surface of thin films and the shortest root diameter was about 0.219 μm. The UV-Vis absorption spectra exhibited the absorption edges that were slightly shifted to the lower wavelength. From this result, the incorporation of aluminum into the ZnO involved a slight increase in the optical band-gap of films. The optical bands of films were 3.102 eV, 3.115 eV, 3.118 eV, 3.115 eV, 3.109 eV, and 3.109 eV for ZnO, ZnO:Al 2%, ZnO:Al 4%, ZnO:Al 6%, ZnO:Al 8%, and ZnO:Al 10%, respectively. Increase of Al doping concentration in ZnO films contributed to the increase of their optical band-gap which can be explained by the Burstein-Moss effect.

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Section: Optical Propertiessupporting

confidence: 74%

Rootlike Morphology of ZnO:Al Thin Film Deposited on Amorphous Glass Substrate by Sol-Gel Method

Sutanto

Durri

Wibowo

et al. 2016

Physics Research International

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show abstract

“…The Al 3+ substitute is an accepter. Therefore, Zn i might decrease with the decrease in Al 3+ substitute, because ZnO is a self-assembled oxide compound [14,15]. Thus, this observation also confirms our speculation that the introducing of H reduced the solubility of substitutional Al.…”

Section: Optical Analysissupporting

confidence: 85%

“…3, the Stokes shift increases and no change of band gap energy can be observed in Fig. 4, indicating the gradual decrease in carrier concentration as the continually introducing of H. A reasonable explanation for this is that the introducing of H reduced the solubility of the substitutional Al, even though all the films were deposited from the precursor solutions with constant Al:Zn atomic ratio of up to 4:100 [14,15]. Therefore, the influence of introduced H on Al concentration should be directly responsible for the decrease in carrier concentration.…”

Section: Optical Analysismentioning

confidence: 93%

Concentration-dependent behavior of hydrogen in Al-doped ZnO thin films

Zhao¹,

Shao²,

Qin³

et al. 2011

Journal of Alloys and Compounds

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“…These properties of ZnO thin films depend on the deposition techniques, deposition parameters, doping and post-deposition treatments of the films. [8][9][10][11][12] Although all these factors improve the quality of the films they are at the cost of extra energy, time and resources. High-quality ZnO thin films can be deposited by various techniques like radio-frequency (RF) sputtering, the sol-gel method, thermal oxidation of metallic zinc, thermal evaporation of ZnO powder, 12,13 pulsed laser deposition (PLD) 14 and spray pyrolysis.…”

Section: Introductionmentioning

confidence: 99%

Comparative Study of As-Deposited ZnO Thin Films by Thermal Evaporation, Pulsed Laser Deposition and RF Sputtering Methods for Electronic and Optoelectronic Applications

Vyas

Giri

Singh

et al. 2015

Journal of Elec Materi

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Zinc oxide (ZnO) thin films have been deposited on Si substrate and glass substrate using thermal evaporation, pulsed laser deposition (PLD) and radiofrequency (RF) sputtering methods. The structural, surface morphological, optical and electrical properties of ZnO thin films deposited by these three methods were investigated and compared systematically using x-ray diffractometer, atomic force microscopy, ellipsometric and current-voltage (I-V) measurement. The ZnO films deposited by RF sputtering method were highly oriented along the (002) plane. The ZnO films grown by thermal evaporation and PLD methods exhibited a polycrystalline nature. The surface roughness was found to be the least and the transparency in the visible region was the highest for the films grown by the RF sputtering method as compared to the films grown by the other two methods. The I-V characteristics reveal that the Pd:Au/ZnO (RF-sputtered) Schottky contact exhibited a better value of ideality factor, series resistance and barrier height as compared to the values obtained for Pd:Au/ZnO (thermally evaporated and pulse laser-deposited) Schottky contacts. The optical bandgap was found to be almost the same for the films grown by all three methods and was estimated to be around 3.2 eV.

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Influence of Al-doping on the structure and optical properties of ZnO films

Cited by 57 publications

References 23 publications

Rootlike Morphology of ZnO:Al Thin Film Deposited on Amorphous Glass Substrate by Sol-Gel Method

Rootlike Morphology of ZnO:Al Thin Film Deposited on Amorphous Glass Substrate by Sol-Gel Method

Concentration-dependent behavior of hydrogen in Al-doped ZnO thin films

Comparative Study of As-Deposited ZnO Thin Films by Thermal Evaporation, Pulsed Laser Deposition and RF Sputtering Methods for Electronic and Optoelectronic Applications

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