Influence of Al on the growth of NiSi2 on Si(001)

Structural Changes in Nickel Silicide Thin Films under the Presence of Al and Ga

“…2b). The presence of the polycrystalline NiSi 0.5 Al 0.5 film was proved by electron diffraction analysis elsewhere [19]. The similar sample structure was observed for Al contents ranging from z = 0.2 to z = 0.35.…”

“…We reported for the first time on the structure of thin NiSi 2-x Al x and NiSi 2-x Ga x layers on Si(001) [19,20]. In this study we summarize the observed results and discuss the formation of silicide phases, their structure and chemical composition in Ni-Al-Si and Ni-Ga-Si thin film systems.…”

“…Ni/Ga) = 1/z. A detailed description of the growth procedures for Ni/Al and Ni/Ga samples is given in [19] and [20], respectively.…”

Influence of Ga on the growth of NiSi2 on Si

“…In our previous study we reported on the structure of NiSi 2-x Al x layers on Si(001), which were obtained by solid phase reaction (SPR) [10]. It was shown, that addition of Al leads to the formation of closed NiSi 2 layers.…”

“…Up to now there are only a few studies on the growth of the Ni-Al-Si films on Si [8,9], whereas there are no investigations of the Ni-Ga-Si thin film system. In our previous study we reported on the structure of NiSi 2-x Al x layers on Si(001), which were obtained by solid phase reaction (SPR) [10]. It was shown, that addition of Al leads to the formation of closed NiSi 2 layers.…”