Influence of AlGaN/GaN/InGaN superlattice on the characteristics of LEDs grown by metalorganic chemical vapor deposition

Song, Kwang Hyun; Kang, Pil-Geun; Shin, Heungsoo; Kim, Jong Min; Park, Won-Kyu; Ko, Chul-Gi; Shim, H.W.; Yoon, Dae Ho

doi:10.1016/j.jcrysgro.2010.06.028

Cited by 10 publications

(3 citation statements)

References 24 publications

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“…This is believed to indicate that the MQWs have better periodicity and abrupt interfaces between wells and barriers [14]. It can be seen that heterointerfaces in III-nitrides play important roles in the improvement of performance of GaN-based applications by stress relaxation [19].…”

Section: Resultsmentioning

confidence: 99%

Growth and characterization ofa-plane InGaN/GaN multiple quantum well LEDs grown onr-plane sapphire

Song¹,

Kim²,

Shin³

et al. 2011

Semicond. Sci. Technol.

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Non-polar a-plane InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) with different thicknesses and periods of InGaN wells are prepared and characterized. Non-polar a-plane LEDs are grown directly on r-plane sapphire by metalorganic chemical vapor deposition, and LEDs are fabricated. In the electroluminescence (EL) measurements, the relative output power increases slightly with increasing well thickness and the forward operating voltage at 20 mA increases slightly, even though the 4.2 nm thick well exhibits the best photoluminescence (PL) and x-ray diffraction (XRD) results. Although the interface quality degrades with thicker InGaN wells, the relative output power in EL measurement increases due to an increase of carrier capture rate with well thickness. With increasing periods of MQWs up to seven, the relative output power of LEDs is improved due to the increased crystal and interface quality in MQWs. Meanwhile, the forward operating voltage at 20 mA increases from 3.58 to 4.12 V because the series resistance of undoped areas increases with increasing periods of MQWs.

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Section: Resultsmentioning

confidence: 99%

Growth and characterization ofa-plane InGaN/GaN multiple quantum well LEDs grown onr-plane sapphire

Song¹,

Kim²,

Shin³

et al. 2011

Semicond. Sci. Technol.

Self Cite

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“…16) It has also been reported that the SL prevents the propagation of dislocations or point defects. [17][18][19] Furthermore, it was reported that an InGaN layer placed directly under the light-emitting layer suppresses the overflow of electrons by cooling the hot electrons, and reduces the valence band barrier heights of the MQWs, in turn improved hole transport across the MQWs and lead to the improvement of the radiative recombination rate. 20,21) The same effect can be expected in the case of the InGaN=GaN SL.…”

Section: Introductionmentioning

confidence: 99%

Separation of effects of InGaN/GaN superlattice on performance of light-emitting diodes using mid-temperature-grown GaN layer

Sugimoto

Okada

Kurai

et al. 2018

Jpn. J. Appl. Phys.

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We evaluated the electrical properties of InGaN-based light-emitting diodes (LEDs) with a superlattice (SL) layer or a mid-temperature-grown GaN (MT-GaN) layer just beneath the multiple quantum wells (MQWs). Both the SL layer and the MT-GaN layer were effective in improving the electroluminescence (EL) intensity. However, the SL layer had a more pronounced effect on the EL intensity than did the MT-GaN layer. Based on a comparison with devices with an MT-GaN layer, the overall effects of the SL could be separated into the effect of the V-pits and the structural or compositional effect of the SL. It was observed that the V-pits formed account for 30% of the improvement in the LED performance while the remaining 70% can be attributed to the structural or compositional effect of the SL.

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“…These electrical and optical challenges can be overcome by performing substrate heating during sputtering or post-deposition annealing at specific heat treatment conditions [9][10][11]. Post-deposition annealing at certain temperature can transform the as grown amorphous ITO into polycrystalline ITO with superior optoelectronics functionality [12]. Some researchers observed an improvement in both the ITO thin films and the ITO/Si interface properties with the increasing of annealing temperature up to 300 • C [13], whereas other group of researchers reported on the improved optoelectronics properties of ITO-based transparent conductive electrodes after post-deposition annealing at temperature of 500 • C and 600 • C [14].…”

Section: Introductionmentioning

confidence: 99%

Improved optoelectronics properties of ITO-based transparent conductive electrodes with the insertion of Ag/Ni under-layer

Ali¹,

Shuhaimi²,

Hassan³

2014

Applied Surface Science

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Influence of AlGaN/GaN/InGaN superlattice on the characteristics of LEDs grown by metalorganic chemical vapor deposition

Cited by 10 publications

References 24 publications

Growth and characterization ofa-plane InGaN/GaN multiple quantum well LEDs grown onr-plane sapphire

Growth and characterization ofa-plane InGaN/GaN multiple quantum well LEDs grown onr-plane sapphire

Separation of effects of InGaN/GaN superlattice on performance of light-emitting diodes using mid-temperature-grown GaN layer

Improved optoelectronics properties of ITO-based transparent conductive electrodes with the insertion of Ag/Ni under-layer

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