Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC

Boeykens, Steven; Leys, Maarten; Germain, Marianne; Belmans, Ronnie; Borghs, Gustaaf

doi:10.1016/j.jcrysgro.2004.08.047

Cited by 10 publications

(8 citation statements)

References 13 publications

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“…At the beginning of the deposition process the 100 nm thick AlN wetting layer was deposited [5,6] at the temperature of 1070 1C and reactor pressure of 50 mbar. These wetting layer growth conditions were kept identical for all analyzed samples.…”

Section: Methodsmentioning

confidence: 99%

Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H–SiC

Caban

Strupiński

Szmidt

et al. 2011

Journal of Crystal Growth

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A1. Defects A1. High resolution X-ray diffraction A1. Nucleation A3. Low pressure metalorganic vapor phase epitaxy B1. Nitrides B3. High electron mobility transistors a b s t r a c tThe influence of growth pressure on the coalescence thickness and the crystal quality of GaN deposited on 4H-SiC by low pressure metalorganic vapor phase epitaxy was studied. It was shown that growth pressure has an impact on the surface roughness of epilayers and their crystal quality. GaN coalescence thicknesses were determined for the investigated growth pressures. The GaN layers were characterized by AFM and HRXRD measurements. HEMT structures were also fabricated and characterized. Among the growth pressures studied, 50, 125 and 200 mbar, 200 mbar was found to be most suitable for GaN/SiC epitaxy.

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Section: Methodsmentioning

confidence: 99%

Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H–SiC

Caban

Strupiński

Szmidt

et al. 2011

Journal of Crystal Growth

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“…GaN layers were grown on silicon carbide (as-received and etched) substrates in an AIX 200/4 RF-S metalorganic vapor phase epitaxy low-pressure reactor (LP MOVPE). In the beginning 100-nm-thick aluminum nitride layers were deposited as a wetting layer [8,9], followed by 1400 nm of gallium nitride. The source gases were trimethylaluminium (TMAl, 20 sccm), trimethylgallium (TMGa, 20 sccm) and ammonia (NH 3 , 2000 sccm for both AlN and GaN).…”

Section: Methodsmentioning

confidence: 99%

The influence of substrate surface preparation on LP MOVPE GaN epitaxy on differently oriented 4H-SiC substrates

Caban

Kościewicz

Strupiński

et al. 2008

Journal of Crystal Growth

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a b s t r a c tThe influence of surface preparation and off-cut of 4H-SiC substrates on morphological and structural properties of GaN grown by low-pressure metalorganic vapor phase epitaxy was studied. Substrate etching has an impact on the surface roughness of epilayers and improves its crystal quality. The GaN layers were characterized by atomic force microscopy (AFM) and high-resolution X-ray diffractometry (HRXRD) measurements. It was observed that on-axis 4H-SiC is most suitable for GaN epitaxy and that substrate etching improves the surface morphology of epilayer.

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“…Growth details were published elsewhere [14]. Two differentp-type 4H-SiC substrates (on-axis orientation, doping level of 2x1018 cm-3 and 80 off-axis orientation, doping level of IxIO18 cm-3) were available for the n-type GaN (2X1018 cm-3) epitaxial layer growth using an n-type AlGaN (1019 cm-3) nucleation layer.…”

Section: Methodsmentioning

confidence: 99%

“…II-Nitrides are primarily grown on sapphire substrates [6][7][8], while alternative materials such as 4H-and 6H-SiC are increasingly investigated [9][10][11][12][13][14] because of their higher thermal and electrical conductivity as well as better lattice matching for hetero-epitaxial growth of GaN. Heterojunctions n-GaN/p-SiC and n-AlGaN/p-SiC are of interest for use in Heterojunction Bipolar Transistors (HBT).…”

Section: Introductionmentioning

confidence: 99%

“…In order to obtain high quality nitride layers on SiC substrates it is necessary to optimize many parameters, especially nucleation layer thickness, composition of this layer, and substrate orientation [14] because of their effect on interface-related properties. In this contribution we present experimental results concerning deep defects in heterostructures GaN/AlGaN/SiC prepared on 4H-SiC substrates.…”

Section: Introductionmentioning

confidence: 99%

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Deep Defects in MOVPE Grown SiC/AlGaN/GaN Heterostructures

Kindl

Hubı́k

Krištofik

et al. 2006

2006 International Conference on Advanced Semiconductor Devices and Microsystems

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and boeykengimec.be Deep level transient spectroscopy (DLTS) measurement was carried out on GaN/AIGaN/SiC heterostructures prepared by low-pressure metalorganic vapour phase epitaxy. Two kinds of p-type 4H-SiC substrates were employed for the n-GaN layer growth using an n-AlGaN nucleation layer. Two different aluminium concentrations of 30% and 8% were tested. DLTS spectra of on-axis (0001) grown samples exhibit a peak of majority carrier trap with apparent activation energy of 0. 78 e V regardless ofnucleation layer composition. As the amplitude of this peak is almost insensitive to the height offilling pulses and the space charge region in AlGaN is negligible, the level may be associated with a hole trap in the substrate. The off-axis grown samples show a majority trap-like DLTS peak only under high positive filling pulses. Therefore, activation energy of 0. 66 e V obtainedfor both nucleation layer compositions is related to an interface defect.

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Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC

Cited by 10 publications

References 13 publications

Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H–SiC

Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H–SiC

The influence of substrate surface preparation on LP MOVPE GaN epitaxy on differently oriented 4H-SiC substrates

Deep Defects in MOVPE Grown SiC/AlGaN/GaN Heterostructures

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