Influence of alkali metallization (Li, Na and K) on photoluminescence properties of porous silicon

Esmer, Kadir; Kayahan, Ersin

doi:10.1016/j.apsusc.2009.09.020

Cited by 20 publications

(15 citation statements)

References 18 publications

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“…Recently, researchers have been also working on the PL stability and the PL efficiency problems of PS [3]. Among these solutions metallization coating of the PS surface can be given as example [4]. However, there were only few previous studies in literature about the spatial distribution of PL of PS.…”

Section: Introductionmentioning

confidence: 99%

“…It has an effective luminescence in the visible region at room temperature [1][2][3][4]. There are many possible applications using the available silicon technology in opto-electronic applications at near future.…”

Section: Introductionmentioning

confidence: 99%

“…Porous silicon is obtained by electrochemically etching in hydrofluoric acid (HF) based solution from crystalline silicon (c-Si) [1][2][3][4]. It has an effective luminescence in the visible region at room temperature [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

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Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy

Kayahan

2017

SDÜ Fen Bil Enst Der

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Abstract:The observation of effective luminescence (PL) from the porous silicon (PS) at the visible region at room temperature is one of the prevalent topics in recent years. This is why there are many application areas in optoelectronics integration with the existing silicon technology. However, non-uniformity of PL is an important problem and should be solved before using its future applications as light emitting diodes (LEDs). In this study, spatial distribution properties of photoluminescence of porous silicon were investigated by imaging spectroscopy (IS) on macro (95 mm 2 ) and micro (10 µm 2 ) scale. It has been showed that the spatial distribution of PL is not homogeneous. The PS luminescence homogeneity is also affected by the production parameters and the post-anodization environmental conditions. It was showed that luminescence intensity and luminescence homogeneity increased with atmospheric aging. Nano-Gözenekli Silisyumun Mikro ve Makro Ölçekte Fotolüminesans Homojenliğinin Görüntü Spektroskopisi Yöntemi ile İncelenmesi Anahtar KelimelerGözenekli silisyum, Görüntü spektroskopisi, FotolüminesansÖzet: Gözenekli Silisyumdan (PS) oda sıcaklığında görünür bölgede etkili lüminesans (PL) gözlenmesi son yılların oldukça popüler konularındandır. Bunun altında yatan temel neden mevcut silisyum teolojisi ile birleştirilerek optoelektronikte pek çok uygulama alanın olmasıdır. Fakat özellikle ışık yayan diyot (LED) uygulamalarına geçilmeden önce lüminesans homojenliği probleminin çözülmesi gerekmektedir. Bu çalışmada Gözenekli Silisyumun fotolüminesans (PL) özelliği makro (95 mm 2 ) ve mikro (10 µm 2 ) ölçekte uzaysal dağılımı görüntü spektroskopisi (IS) yöntemi ile incelenmiştir. PL'nin uzaysal dağılımının incelenen ölçeklerde homojen olmadığı ve PS lüminesans homojenliğinin üretim parametrelerinden ve anodizasyon sonrası çevre koşullarından etkilendiği tespit edilmiştir. Lüminesans şiddetinin ve homojenliğinin atmosferik yaşlanmaya bağlı olarak arttığı görülmüştür.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy

Kayahan

2017

SDÜ Fen Bil Enst Der

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“…Porous silicon based optoelectronic devices undergo substantial degradation in the luminescence spectrum with aging due to atmospheric oxidation [2]. Therefore, the surface of the PS needs to be passivated to produce a stable luminescence [2,3].…”

Section: Introductionmentioning

confidence: 99%

“…In our previous studies [2][3][4], the metallization and aging effects on surface properties and PL properties of porous silicon were investigated. Therefore, this study presents the results on the effects of surface modification on the luminescence degradation properties of the PS by adsorption of the Li, K and Na atoms using immersion plating method.…”

Section: Introductionmentioning

confidence: 99%

Effects of Alkali Metallization on the Luminescence Degradation of Porous Silicon

2012

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In this study, change in the intensity and stability of photoluminescence obtained by porous silicon were investigated with illumination time and metallization state. The porous silicon samples were metallized by immersing into solutions containing 3 mM LiNO 3 , KNO 3 and NaNO 3 metal salts using immersing plating method. The surface bond configurations of porous silicon were monitored by the Fourier transmission infrared spectroscopy and the results showed that the surfaces of the samples were oxidized after the metallization. The photoluminescence intensity increased after certain critical immersion times and photoluminescence spectrum shifted towards the high energy region after the metallization. Photoluminescence intensity of metallized porous silicon samples was more stable than as-anodized porous silicon samples. The experimental results suggested the possibility that oxygen and/or alkali metal (Li, K and Na) passivation of porous silicon surface could be a suitable way to obtain an efficient and stabilized photoluminescence.

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Silicon Science and Technology as the Background of the Current and Future Knowledge Society

Pizzini

2012

Advanced Silicon Materials for Photovoltaic Applications

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This introductory chapter aims to present the unique potentialities of semiconductor silicon as the substrate or the component of a variety of devices that support the development of the society in which we live today and where our sons and daughters will live, hopefully, tomorrow; taking, however, as known all the very basic physics concerning the electronic and optical properties of semiconductor silicon as well as the basic concepts concerning silicon devices [1][2][3][4][5][6][7]. Also, considering the number of issues that should be taken into consideration to enlighten this critical role of silicon, only a few of these, selected in a very personal, and possibly not entirely objective, manner will be discussed in full detail.The discussion will start from the thermonuclear synthesis of silicon and will end with the properties and applications of silicon nanodots and nanowires studied today in research labs worldwide, with the consideration that silicon's uniqueness derives from its specific structural, physical and chemical properties, which make elemental silicon readily obtainable from widely diffused raw materials and directly suitable for technological applications in microelectronics, optoelectronics and photovoltaics, without neglecting high-power devices, chemical sensors and radiation detectors.The analysis will be focused on the variety of its structural forms, which range from single crystal towards microcrystalline, nanocrystalline and amorphous, with a discontinuous change of properties that, in fact, allow a multiplicity of applications.

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Influence of alkali metallization (Li, Na and K) on photoluminescence properties of porous silicon

Cited by 20 publications

References 18 publications

Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy

Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy

Effects of Alkali Metallization on the Luminescence Degradation of Porous Silicon

Silicon Science and Technology as the Background of the Current and Future Knowledge Society

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