“…The solid precursor materials were heated at fixed temperatures of 140°C and 220°C for Al and Yb, respectively, and the generated vapors were delivered to the reaction zone by passing preheated Helium (He) carrier gas. He flow rate was regulated to deliver 1.67 mol% of AlCl3 and 1.11 mol% of Yb(thd)3 (with respect to inlet gas mixture) which had earlier resulted in ~7.1 and ~0.22 mol% of Al2O3 and Yb2O3, respectively, in a fabricated preform . All other process parameters were kept constant including SiCl 4 flow rate (0.58 g/min), carriage traversed speed (125 mm/min), total gas flow rate (1 L/min), ribbon burner temperatures (260 ± 10°C), etc.…”