Influence of an Accelerator in Cu Thin-film Growth by Potentiostat Electrodeposition

Lee, Youn‐Seoung; Lee, Yonghyuk; Ju, Hyunjin; Rha, Sa‐Kyun; Kang, Byoungju; Lee, Seung‐Hee

doi:10.3938/jkps.58.1527

J. Korean Phy. Soc.

2011

DOI: 10.3938/jkps.58.1527

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Influence of an Accelerator in Cu Thin-film Growth by Potentiostat Electrodeposition

Youn‐Seoung Lee¹,

Yonghyuk Lee²,

Hyunjin Ju³

et al.

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“…Ti was practically employed as a diffusion barrier for Cu interconnect in previous studies. 30,31 Nevertheless, this research regarding the surface morphology evolution of Cu electrodeposited directly on Ti diffusion barrier was not studied previously. Fundamental studies beginning from the nucleation and growth of Cu directly on Ti diffusion barrier are necessary to make this technology practical.…”

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Surface Morphology Evolution of Cu Thin Films Electrodeposited Directly on Ti Diffusion Barrier in Citric Acid

Kim

2015

J. Electrochem. Soc.

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The formation of Cu thin film directly on Ti diffusion barrier by electrodeposition is important for next generation Cu interconnect in Si-based microelectronic devices. It depends on the surface morphology evolution of Cu deposit at the initial stage of nucleation and growth. In this study, we investigated the surface morphology evolution of Cu thin film on Ti in citric acid solution, introducing several simple ways to determine the stages of nucleation, Cu nuclei overlap, and Cu film formation with deposition time. During potentiostatic Cu deposition, studies on morphology change using the chronoamperometry, the change of surface roughness, and the change of sheet resistance and sheet resistivity are carried out along with microscopic observation. Resultant surface morphology of Cu deposit on Ti is greatly influenced by nucleation behavior, and its dependence on deposition potential is also studied in relation with the calculation of critical Cu nucleus size. According to the suggested ways, it is available to indirectly observe the transition of Cu nuclei to Cu thin film on Ti diffusion barrier during electrodeposition. Electrodeposition has been widely used to fabricate Cu interconnect in ultra large scale integrated Si microelectronic device since 1997.1 As the width of Cu interconnect line in the Si device gets shrinking under 45 nm, more sophisticated control of Cu electrodeposition process parameters is required to fill dual-damascene structures with void-free Cu. Many researchers have tried to understand the behaviors of additives like suppresser, leveler, and accelerator in electrolytes, which are valid for Cu growth control within sub-45 nm wide dual-damascene structures of the Si device.2-5 Another effort has been made to give more space for Cu fill within dual-damascene structures by eliminating a seed layer for Cu electrodeposition. It has been reported that seedless Cu electrodeposition directly on diffusion barrier is a promising approach to fabricate sub-45 nm Cu interconnect line.6-12 Cu was electrodeposited directly on non-metallic diffusion barriers such as W 2 N, TiN, and TaN. However, seedless Cu electrodeposition is moderately limited for wafer-level Cu interconnect fabrication. Significant difference of deposition current density across a Si wafer leads to the non-uniformity of thickness and microstructure of an electrodeposited Cu layer because non-metallic diffusion barrier layers have much higher electrical resistivities than a Cu seed layer.Metallic diffusion barriers, which are mostly transition metals such as Ru, W, Ta, Ti, Cr, Ni, Co, Pt, Pd, Nb, Mo, Ir, and Os, have been suggested due to their relatively high electrical conductivity, excellent resistance to Cu diffusion, and immiscible characteristic with Cu. 13-18Ru among them has been most frequently treated for next generation diffusion barrier of Cu interconnect so far. [19][20][21] We have previously reported seedless Cu electrodeposition on W and Ta diffusion barriers with regard to the nucleation and growth of Cu thin film....

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Surface Morphology Evolution of Cu Thin Films Electrodeposited Directly on Ti Diffusion Barrier in Citric Acid

Kim

2015

J. Electrochem. Soc.

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Influence of an Accelerator in Cu Thin-film Growth by Potentiostat Electrodeposition

Cited by 1 publication

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Surface Morphology Evolution of Cu Thin Films Electrodeposited Directly on Ti Diffusion Barrier in Citric Acid

Surface Morphology Evolution of Cu Thin Films Electrodeposited Directly on Ti Diffusion Barrier in Citric Acid

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