Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks

Abstract

et al. Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks. Sci China Inf Sci, 2020, 63(2): 129403, https://doi.

State of the Art and Future Perspectives in Advanced CMOS Technology

“…Furthermore, the film thickness is another important elementary to reliability issues. The atomic layer deposition Titanium Nitride (ALD TiN) layer plays a very important role in CMOS integration [ 296 , 297 , 298 , 299 ]. The devices with different thickness of ALD TiN show the similar electrical parameters, while the reliability issues of devices are obviously different.…”

“…The devices with different thickness of ALD TiN show the similar electrical parameters, while the reliability issues of devices are obviously different. Usually, the devices with thin ALD TiN layer show worse hot carrier injection (HCI) and better bias temperature instability (BTI) than that with thick ALD TiN due to the chlorine diffusion [ 10 , 296 ] and nitrogen diffusion [ 297 , 298 ], respectively. Therefore, it is key to restrain reliability degradation of advanced CMOS technology by controlling the process.…”