Influence of an insulation partition on a seeded directional solidification process for quasi-single crystalline silicon ingot for high-efficiency solar cells

Ma, Wencheng; Guan, Zhong; Sun, Lei; Yu, Qinghua; Huang, Xinming; Liu, Lijun

doi:10.1016/j.solmat.2012.01.024

Cited by 95 publications

(41 citation statements)

References 24 publications

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“…This simplification has been used by many researchers [1][2][3][4][5]8,[13][14][15][16][17]. The simulation results have also been validated by comparison with experimental results [3,16,17]. In this study, the real growth process provided by Sino-American Silicon Products Inc. (SAS, Taiwan) is adopted.…”

Section: Methodsmentioning

confidence: 99%

Numerical Study of the Thermal and Flow Fields during the Growth Process of 800 kg and 1600 kg Silicon Feedstock

Nguyen

Chen

et al. 2017

Crystals

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Two-dimensional (2D) transient numerical simulations are performed to investigate the evolution of the thermal and flow fields during the growth of multi-crystalline silicon ingots with two different silicon feedstock capacities, 800 kg and 1600 kg. The simulation results show that there are differences in the structure of the melt flow. In the 1600 kg case, there is a reduction in the concavity of the crystal-melt interface near the crucible wall and an increase in the convexity of the interface at higher solidification fractions. Moreover, the Voronkov ratios, which are indicative of the formation of defects, become lower during the solidification process.

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Section: Methodsmentioning

confidence: 99%

Numerical Study of the Thermal and Flow Fields during the Growth Process of 800 kg and 1600 kg Silicon Feedstock

Nguyen

Chen

et al. 2017

Crystals

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show abstract

“…During the process itself, all furnace parts are fixed. Some models allow the horizontal insert of an insulation plate for improved temperature control (Ma et al, 2012). The shift of the solid-liquid interface is managed by variations of the heater power of the different heating elements.…”

Section: The Hardwarementioning

confidence: 99%

Silicon Crystallization Technologies

Dold

2015

Semiconductors and Semimetals

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“…Multi-crystalline · Low production cost · High-capacity production · Reduction of efficiency by defect · Grain boundary control -Increase of 3 grain boundary density [3] -Application of crucible noncontact technology [9] -Increase of cooling temperature [10] · Impurity control -Reduction of atmospheric CO transport [11] -Disuse of graphite component [12] -Use of Si 3 N 4 coated crucible [13] Mono-like Si · Low production cost · High efficiency · Reduction of single crystal fraction by nucleation from side crucible · Hot zone design [16,17] -Insulator supplement and cooling increase at bottom · Seed orientation control [4] · Heat loss control -Installation of insulation partition at heat loss part [18] …”

Section: 산소 석출을 감소시키기 위해mentioning

confidence: 99%

The current status in the silicon crystal growth technology for solar cells

Lee¹,

Kim²

2014

Journal of the Korean Crystal Growth and Crystal Technology

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Three kinds of crystalline silicon have been used for the solar cell grade. First of all, single crystalline silicon is the main subject to enhance the production yield. Most of the efforts are focused on the control of the melt-crystal interface shape affected by the crystal-crucible rotation rate. The main subject in the multi-crystalline silicon ingot is the contamination control. Faster Ar gas flow above the melt surface will lower the carbon contamination in the crystal. And also, twin boundary electrically inactive is found to be more effective than grain boundary for the improvement of the MCLT. In the case of mono-like silicon material, propagation of the multi-crystalline silicon growing from the inner side crucible is the problem lowering the portion of the single crystalline part at the center of the ingot. Crystal growing apparatus giving higher cooling rate at the bottom and lower cooling rate at the side crucible was suggested as the optimum solution obtaining higher quality of the mono-like silicon ingot. Proper application of the seeds at the bottom of the crucible would be one of the solutions.

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Influence of an insulation partition on a seeded directional solidification process for quasi-single crystalline silicon ingot for high-efficiency solar cells

Cited by 95 publications

References 24 publications

Numerical Study of the Thermal and Flow Fields during the Growth Process of 800 kg and 1600 kg Silicon Feedstock

Numerical Study of the Thermal and Flow Fields during the Growth Process of 800 kg and 1600 kg Silicon Feedstock

Silicon Crystallization Technologies

The current status in the silicon crystal growth technology for solar cells

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