Influence of an integrated quasi-reference electrode on the stability of all-solid-state AlGaN/GaN based pH sensors

Xing, Jieying; Huang, Dejia; Dai, Yaqiong; Liu, Yuebo; Ren, Yuan; Han, Xiaobiao; Yang, Hang; Hou, Yaqian; Wu, Zhisheng; Liu, Yang; Zhang, Baijun

doi:10.1063/1.5034367

Cited by 7 publications

(6 citation statements)

References 25 publications

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“…To demonstrate the general applicability of the G‐GFP in FETs with other semiconductors, we have fabricated and measured FETs based on ultrawide bandgap materials (epitaxially grown AlGaN/GaN) . For various contacts, the AlGaN/GaN‐based FETs were made with unalloyed or alloyed metal electrodes for poor or better injection, respectively.…”

Section: Resultsmentioning

confidence: 99%

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A General Approach to Probe Dynamic Operation and Carrier Mobility in Field‐Effect Transistors with Nonuniform Accumulation

Han

Chen

et al. 2019

Adv Funct Materials

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Revealing the intrinsic electrical properties is the basis of understanding new functional materials and developing their applications. However, in nonideal field-effect transistors (FETs), conventional current-voltage characterizations do not accurately probe charge transport, particularly for newly developed semiconductors. Here, a generalized gated four-probe (G-GFP) technique is developed, which detects dynamic changes in carrier accumulation and transport. The technique is suitable for exploring the intrinsic properties of semiconductors in FETs with arbitrary contacts and in any operational regimes above the threshold. Application to simulated transistors confirms its accuracy in probing the evolution of channel potential, drift field, and gate-dependent carrier mobility for devices with a contact-limited operation and disordered semiconductors. Comparative experiments are performed based on FETs with various materials, device structures, and operational temperatures. The G-GFP technique proves to exclude the various injection properties, to detect in situ how carriers are accumulated, and to clarify carrier mobility of the semiconductors. In particular, the well-known "double-slope" features in the current-voltage relations are controllably generated and their origins are identified. The approach could be used to explore electronic properties of newly developed materials such as organic, oxide, or 2D semiconductors.

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Section: Resultsmentioning

confidence: 99%

“…The AlGaN/GaN films are the same as described in ref. and more details of the devices are given in the Supporting Information.…”

Section: Methodsmentioning

confidence: 99%

A General Approach to Probe Dynamic Operation and Carrier Mobility in Field‐Effect Transistors with Nonuniform Accumulation

Han

Chen

et al. 2019

Adv Funct Materials

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“…For metal ion detection, either a metal gate with optional functionalization or a surface-functionalization nonmetallized gate region is employed. Furthermore, reference electrodes are often used to improve the stability of sensors [41]. Moreover, a normally-off AlGaN/GaN HEMT using a recessed-gate structure [38] and AlGa(In)N/GaN HEMTs with multi-segment sensitive regions [40] were also developed to improve the sensitivity of HEMT-based sensors.…”

Section: Detection Principle and Structural Design Of Algan/gan Hemt-...mentioning

confidence: 99%

Applications of AlGaN/GaN high electron mobility transistor-based sensors in water quality monitoring

Guo¹,

Jia²,

Yan³

et al. 2020

Semicond. Sci. Technol.

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AlGaN/GaN high electron mobility transistors (HEMTs) have demonstrated their extraordinary potential in developing solid-state microsensors for detecting gases, metal ions, anions, biomolecules, and other substances due to their excellent chemical stability, high surface charge sensitivity, high temperature-tolerance performance, and low power consumption characteristics. In this paper, only three types of AlGaN/GaN HEMT-based sensors used for detecting the pH value, heavy metal ions, and harmful anions, which are suitable for water quality monitoring, will be discussed. First, we introduce the structural design, detection principle, and fabrication processes of AlGaN/GaN HEMT-based sensors. Then, surface functionalization methods for the gate region, sensing mechanisms, and the sensitivity and selectivity performances based on different gate region treatments are reviewed and analyzed. Finally, some challenging problems that hinder the practical application of the sensors are proposed.

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“…To monitor and model this exchange, pH measurement of the water trapped in the pores of the concrete is a key point [2]. Conventional pH sensors (glass electrode [3]) cannot be used in such a harsh environment. Therefore, with the aim of long-term monitoring of storage facilities, we propose to use AlGaN/GaN-based HEMT (High Electron Mobility Transistor) sensors (see Fig.…”

Section: Introductionmentioning

confidence: 99%

“…This work aims to investigate pH sensitivity of a Sc2O3/u-GaN based EIS and MIS devices (see Fig. 1), in order to optimize the growth and annealing parameters of the Sc2O3 layer, which will be then deposited on top of AlGaN/GaN HEMT transistor gate, to form AlGaN/GaN-based ISFET [3,17] with on chip integrated quasi reference electrode (instead of conventional fragile glass electrode).…”

Section: Introductionmentioning

confidence: 99%

Investigation of Sc₂O₃ Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH Sensor

Sama

Bouhnane²,

Gautier³

et al. 2019

2019 Ieee Sensors

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In this work, an all-solid-state electrolyteinsulator-semiconductor (EIS) device is developed for pH sensing performance evaluation of insulating materials. The EIS capacitor incorporates scandium oxide (Sc2O3) sensing film deposited on undoped gallium nitride (u-GaN) by thermal evaporation. The structural and morphological features of the thin films annealed at different temperature (650-850°C), were investigated through X-ray diffraction and AFM analysis. A gold wire with diameter of 25 pm was bonded on the device and served as the quasi reference electrode for the C-V measurements and pH sensitivity characterizations. After correction of the measured capacitance regarding the pH dependent variation of the standard potential E0(pH) of gold, the Sc2O3 EIS capacitor prepared with an annealing at 650°C exhibited a linear response with a sensitivity of 40 mV/pH while the device with the as-deposited Sc2O3 film showed nonlinear behavior and, those annealed at temperature higher than 650°C were shown to be insensitive to pH variation.

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Influence of an integrated quasi-reference electrode on the stability of all-solid-state AlGaN/GaN based pH sensors

Cited by 7 publications

References 25 publications

A General Approach to Probe Dynamic Operation and Carrier Mobility in Field‐Effect Transistors with Nonuniform Accumulation

A General Approach to Probe Dynamic Operation and Carrier Mobility in Field‐Effect Transistors with Nonuniform Accumulation

Applications of AlGaN/GaN high electron mobility transistor-based sensors in water quality monitoring

Investigation of Sc₂O₃ Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH Sensor

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Influence of an integrated quasi-reference electrode on the stability of all-solid-state AlGaN/GaN based pH sensors

Cited by 7 publications

References 25 publications

A General Approach to Probe Dynamic Operation and Carrier Mobility in Field‐Effect Transistors with Nonuniform Accumulation

A General Approach to Probe Dynamic Operation and Carrier Mobility in Field‐Effect Transistors with Nonuniform Accumulation

Applications of AlGaN/GaN high electron mobility transistor-based sensors in water quality monitoring

Investigation of Sc2O3 Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH Sensor

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Investigation of Sc₂O₃ Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH Sensor