Influence of Annealing and Argon Pressure on the Microcrystalline Structure of Magnetron-Sputtered Textured Cobalt Films

Dzhumaliev, A. S.; Nikulin, Yu. V.; Filimonov, Yu. A.

doi:10.1134/s1063784218110099

Cited by 6 publications

(3 citation statements)

References 54 publications

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“…One can explain the observed results by temperature effects on catalytic cobalt interlayer leading to the different graphene growth conditions. Co film grain size increase with substrate temperature [32][33][34][35]. Co film can become both smoother [35] and rougher with increased annealing temperature [34].…”

Section: Ion Beam Energymentioning

confidence: 99%

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Cobalt-Activated Transfer-Free Synthesis of the Graphene on Si(100) by Anode Layer Ion Source

et al. 2022

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In this research, the graphene was grown directly on the Si(100) surface at 600 °C temperature using an anode layer ion source. The sacrificial catalytic cobalt interlayer assisted hydrocarbon ion beam synthesis was applied. Overall, two synthesis process modifications with a single-step graphene growth at elevated temperature and two-step synthesis, including graphite-like carbon growth on a catalytic Co film and subsequent annealing at elevated temperature, were applied. The growth of the graphene was confirmed by Raman scattering spectroscopy and X-ray photoelectron spectroscopy. The atomic force microscopy and scanning electron microscopy were used to study samples’ surface morphology. The temperature, hydrocarbon ion beam energy, and catalytic Co film thickness effects on the structure and thickness of the graphene were investigated. The graphene growth on Si(100) by two-step synthesis was beneficial due to the continuous and homogeneous graphene film formation. The observed results were explained by peculiarities of the thermally, ion beam, and catalytic metal activated hydrocarbon species dissociation. The changes of the cobalt grain size, Co film roughness, and dewetting were taken into account.

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Section: Ion Beam Energymentioning

confidence: 99%

“…Thus, adsorbed hydrocarbon and carbon species are diffused to the catalytic Co film. However, cobalt grain size increase [32][33][34][35], and cobalt dewetting [30,31] can occur during the graphene synthesis due to the elevated temperature.…”

Section: Single-step Versus Two-step Graphene Synthesismentioning

confidence: 99%

Cobalt-Activated Transfer-Free Synthesis of the Graphene on Si(100) by Anode Layer Ion Source

et al. 2022

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“…In this regard, cobalt (Co), a lower electron mean free path metal (7-12 nm at room temperature), is considered a potential interconnecting metal to replace the conventional use of Cu. [3][4][5][6] Co films have been widely deposited using physical vapor deposition, 7,8 chemical vapor deposition, [9][10][11][12] vapor-phase atomic layer deposition, [13][14][15][16] electroless deposition, 5,[17][18][19][20][21] and electrochemical deposition. [22][23][24] Among these deposition techniques, electrochemical deposition is a simple and high-volume manufacturing process and has been implemented with applying Co interconnecting material on a TiN liner.…”

mentioning

confidence: 99%

Synthesis of Dilute Phosphorous-Embedded Co Alloy Films on a NiSi Substrate with a Superior Gap-Filling Capability for Nanoscale Interconnects

Fang

Cheng

et al. 2021

J. Electrochem. Soc.

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Nanoscale cobalt interconnection wire has a lower mean free path of electrons to reduce the electrical resistivity, therefore it has been increasingly studied as a promising interconnect material to replace the conventionally used copper in state-of-the-art nanoscale devices. This process further limits the space for barrier/seed layer deposition to conformally fill the narrow trenches/contact holes in nanoscale devices. Thus, an electrochemical approach not involving a conventional high-resistivity barrier is presented to study the gap-filling capability and properties of Co(P) films with a controlled composition on a NiSi substrate. Examining electrodeposited Co(P) films reveals that the composition is determined mainly by the deposition potential instead of the amount of NaH2PO2 in the electrolytes, yielding a film with a phosphorous concentration lower than 2.62 at.%. The lightly doped Co(P) film has an hexagonal close-packed Co structure with phosphorous atoms at the interstitial lattice site. A chronoamperometry study on the current transient during the electrochemical deposition indicates that NaH2PO2 addition can enhance the deposition of the Co(P) films. Hence, the Co(P) film developed here is capable of gap filling nanoscale trenches up to an aspect ratio of 5 and is practical as a contact plug material for NiSi in nanoscale devices.

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Layer-by-layer deposition of breakdown-strengthened Co(Ni) films by modulating termination time over the redox replacement

Fang

Chen

Cheng

et al. 2023

Materials Chemistry and Physics

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Influence of Annealing and Argon Pressure on the Microcrystalline Structure of Magnetron-Sputtered Textured Cobalt Films

Cited by 6 publications

References 54 publications

Cobalt-Activated Transfer-Free Synthesis of the Graphene on Si(100) by Anode Layer Ion Source

Cobalt-Activated Transfer-Free Synthesis of the Graphene on Si(100) by Anode Layer Ion Source

Synthesis of Dilute Phosphorous-Embedded Co Alloy Films on a NiSi Substrate with a Superior Gap-Filling Capability for Nanoscale Interconnects

Layer-by-layer deposition of breakdown-strengthened Co(Ni) films by modulating termination time over the redox replacement

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