Influence of annealing and thickness on the electrical properties of invar36 thin film for strain gauge applications

Abstract

Invar36 thin films with various thicknesses from 200Åto 1400Åare deposited on glass substrates by DC magnetron sputtering technique. After deposition, the samples are annealed in vacuum ambient (10 −5 mbar) upto 500 • C. Electrical properties of as-deposited as well as annealed films are analyzed with respect to thickness and annealing temperature. In situ measurement of sheet resistance of films with respect to annealing temperature is carried out by four probe technique. There is a decrease of sheet resistance and resistivity of all films with increasing temperature irrespective of film thickness.The resistivity of the as deposited films is around 230 µΩ-cm and decreases with increasing temperature and found as 84 µΩ-cm for 550Åfilm annealed at 500 • C. Temperature coefficient of resistance (TCR) of films at different temperature is measured and is found to be in the range of 10 −4 / • C.Gauge factors of as deposited and annealed at 300 • C and 500 • C films are measured by using four point bending technique and it is found that gauge factor decreases with respect to annealing temperature irrespective of film thickness. The best characteristics among different thickness and annealing temperature are obtained at 500 • C, for the films of thicknesses between 400Åto 600Å.

New Physical Deposition Approach for Low Cost Inorganic Hole Transport Layer in Normal Architecture of Durable Perovskite Solar Cells

“…35 As reported before, annealing for a long time at low temperature or high temperature for a short time may release a large amount of residue strains generated during the sputtering method. 36,37 By releasing this strain in the interface of the perovskite and NiO x layers, which is mostly posed to compressive strain at the low deposition pressure, 38 a good junction for charge transportation is potentially developed between perovskite and NiO x layers. Thus, in addition to good charge transport leading to high current density, a charge recombination drop occurs in the interface of the perovskite and NiO x layer and results in larger open circuit voltage.…”

Получение наноостровковых пленок Sn, Al, Cu и исследование их электропроводящих свойств

“…Многочисленные авторы неоднократно рассматривали как теоретические аспекты, так и прак-тические возможности формирования наноостровковых покрытий посредством распада сплошных сверхтонких плeнок при термическом отжиге [3][4][5][6][9][10][11][12][13][14][15].…”

Development of the invar36 thin film strain gauge sensor for strain measurement

“…A four-point bending setup is designed and fabricated in order to study the resistance-strain behavior of strain gauges and hence to measure the GF of the same [14]. A photograph of the GF measurement setup is shown in figure 4.…”

“…Due to their low CTE and soft magnetic properties, these alloys are used in many industrial applications [12]. Invar36 alloy in thin film form is also gaining importance in sensors as well as in micro-electro-mechanical system applications [13][14][15].…”