Influence of annealing environment on magnetic and ferroelectric properties of chemical solution derived nanocrystalline Bi3.15La0.85Ti3O12 thin films

Li, R.; Tang, Xin‐Gui; Jiang, Yanping; Liu, Q. X.; Jiang, Lili

doi:10.1007/s10854-017-7089-x

Cited by 2 publications

(1 citation statement)

References 37 publications

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“…[1][2][3] The metallic conductivity and chemical stability of LNO films make them suitable for use as electrodes for high-quality dielectric and ferroelectric materials in electronic devices. 4,5 Extensive investigations on LNO thin films have been conducted in recent years, particularly on methods to lower the resistivity of LNO films. The resistivity of LNO films may be lowered by depositing high-quality single crystal films or synthesizing nanocomposite films with highly conductive metals.…”

Section: Introductionmentioning

confidence: 99%

Effect of Au Addition on the Crystallinity and Electrical Properties of Thermally Strained LaNiO3−δ Thin Films

Zhu

Shi

Zhao

et al. 2019

Journal of Elec Materi

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We prepared Au-LaNiO 3Àd (Au-LNO) nanocomposite thin films by a sol-gel coating method. The effects of the doped Au on the microstructure and electrical properties of the Au-LNO films under different types of thermal strain were investigated. Introduction of Au into the LNO films changed their preferential orientation and markedly lowered their room-temperature resistivity. Moreover, the resistivity of the films containing Au nanoparticles showed negligible dependence on thermal strain, in contrast to the behavior of Au-free LNO films. We performed microstrain analysis and x-ray photoelectron spectroscopy to explore the strain-resistivity relationship of the films. Microstrain was closely related to the density of oxygen vacancies in LNO films and dominated the change in electrical properties of polycrystalline LNO films. The addition of Au promoted crystallization of the LNO films and decreased the density of oxygen vacancies, which stabilized the microstrain in the films under different external strain and accounted for the strain independence of the resistivity of the Au-LNO films.

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