Influence of annealing in N2 on the properties of In2O3:Sn thin films prepared by direct current magnetron sputtering

Lin, Limei; Lai, Fachun; Qu, Yan; Gai, Rongquan; Huang, Zhigao

doi:10.1016/j.mseb.2007.01.021

Cited by 15 publications

(6 citation statements)

References 24 publications

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“…Thus, the decrease in resistivity is due to an increase in both the carrier mobility and the carrier density of the films. The magnitudes of electrical resistivity for our samples are in agreement with the reported values [29,30]. They correspond to degenerate semiconductors with high free-electron concentration, more than 10 19 cm −3 .…”

Section: Electro-optical Propertiessupporting

confidence: 91%

Study of Structure and Electro-Optical Characteristics of Indium Tin Oxide Thin Films

Khusayfan

El-Nahass

2013

Advances in Condensed Matter Physics

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ITO thin films were prepared by electron beam evaporation of ceramic ITO target. The films were subsequently annealed in air atmosphere at the temperatures 300°C and 600°C in order to improve their optical and electrical properties. The crystal structure and morphology of the films are investigated by X-ray diffraction and scanning electron microscope techniques, respectively. The films exhibited cubic structure with predominant orientation of growth along (222) direction, and the crystallite size increases by rising annealing temperature. Transparency of the films, over the visible light region, is increased by annealing temperature. The resulting increase in the carrier concentration and in the carrier mobility decreases the resistivity of the films due to annealing. The absorption coefficient of the films is calculated and analyzed. The direct allowed optical band gap for as-deposited films is determined as 3.81 eV; this value is increased to 3.88 and 4.0 eV as a result of annealing at 300°C and 600°C, respectively. The electrical sheet resistance is significantly decreased by increasing annealing temperature, whereas figure of merit is increased.

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Section: Electro-optical Propertiessupporting

confidence: 91%

Study of Structure and Electro-Optical Characteristics of Indium Tin Oxide Thin Films

Khusayfan

El-Nahass

2013

Advances in Condensed Matter Physics

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“…Different methods, such as magnetron sputtering [11][12][13], electron beam evaporation [14], spray pyrolysis [15,16], pulsed laser deposition [17] and chemical vapor deposition [18], have been used to fabricate ITO thin films. To improve the optoelectronic properties of ITO film, the use of nanoparticles with monodispersed size distribution has been widely accepted.…”

Section: Introductionmentioning

confidence: 99%

Influence of post-annealing on the structure and optical properties of ITO nanocrystals prepared by electrochemical method

Xu¹,

Wang²,

Ding³

et al. 2012

Materials Research Bulletin

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“…Among these techniques, direct current magnetron sputtering offers much more advantages such as safety, high deposition rate at room temperature, no toxic gas emissions and easy to expand to large scale glass substrate [3]. Electrical resistivity as low as 2～8×10 -4 Ωcm and optical transmittance in the visible spectral region approximately 90% for AZO films have been reported for typical film thickness around 400 nm [4].…”

Section: Introductionmentioning

confidence: 99%

Investigation of conductive and transparent Al-doped ZnO/metal dual-layer films by magnetron sputtering

Fan

Lai

Lin

et al. 2009

4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technolo

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Transparent conductive Al-doped ZnO (AZO)/metal (Ag or Cu) dual-layer films were deposited on glass substrates by direct current magnetron sputtering at room temperature. AZO layer thickness was about 30 nm. The thickness of Ag layer changed from 4.0 to 12.0 nm, and the thickness of Cu layer varied from 2.7 to 8.1 nm. The influence of metallic layer thickness on the structure, optical and electrical properties of dual-layer films was analyzed. Ag (111) crystalline peak was clearly observed in X-ray diffraction pattern as Ag layer thickness increases to 12.0 nm. For AZO/Cu films, besides the Cu crystalline peaks, there are copper oxide crystalline peaks. As Ag layer thickness increases from 4.0 to 12.0 nm, sheet resistance decreases from 6.37 to 3.91 Ω/sq and the average transmittance in the visible spectral region decreases from 83.7% to 72.6%, respectively. The average transmittance of AZO/Cu films with different Cu layer thicknesses is between 70.7% and 75.5%. The lowest sheet resistance is 19.2 Ω/sq when Cu layer thickness is 8.1 nm. The performance of the dual-layer films was also compared using a figure of merit. The results show that the high quality transparent and conductive films can be achieved by using AZO/metal dual-layer films.

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Influence of annealing in N2 on the properties of In2O3:Sn thin films prepared by direct current magnetron sputtering

Cited by 15 publications

References 24 publications

Study of Structure and Electro-Optical Characteristics of Indium Tin Oxide Thin Films

Study of Structure and Electro-Optical Characteristics of Indium Tin Oxide Thin Films

Influence of post-annealing on the structure and optical properties of ITO nanocrystals prepared by electrochemical method

Investigation of conductive and transparent Al-doped ZnO/metal dual-layer films by magnetron sputtering

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