Influence of annealing temperature on structural properties of ITO thin-films on graphite substrate

Bhopal, Muhammad Fahad; Lee, Doo Won; Rehman, Atteq-ur; Lee, Soo Hong

doi:10.1016/j.vacuum.2016.09.001

Cited by 19 publications

(7 citation statements)

References 21 publications

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“…Different approaches have been used to improve densification. The traditional solution was the addition of other metallic oxides as "sintering aids" [26][27][28]. In this case the usual mechanism is the formation of a eutectic liquid between SnO 2 and the "sintering aid" at low temperature which favors a liquid-phase sintering.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of new ceramic electrodes based on Sb-doped SnO2 for the removal of emerging compounds present in wastewater

Mora-Gómez

García-Gabaldón

Ortega

et al. 2018

Ceramics International

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The properties of the ceramic electrodes make them interesting for electrochemical advanced oxidation processes (EAOPs), destined to the elimination of emergent or refractory contaminants, as an alternative to boron-doped-diamond (BDD) electrodes. The oxygen discharge potential (E O2 ) for the ceramic electrodes decreases as the sintering temperature increases, being these values higher than that observed for the Pt electrode and smaller than that for the BDD electrode. This result in a highest rate of 2 COD removal for the electrode sintered at 1050 ºC comparing with the rest of ceramic electrodes under potentiostatic operation. On the other hand, in galvanostatic mode, the performance of the different ceramic electrodes in terms of the degradation of Norfloxacin, used as tested antibiotic, was similar.Comparing the behavior of the ceramic electrode sintered at 1250 ºC and that of the BDD electrode at an applied potential of 3V, it is inferred that although both present similar values in terms of the degradation of Norfloxacin, the rate of removal of the chemical oxygen demand is higher in the case of the BDD.

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Section: Introductionmentioning

confidence: 99%

Evaluation of new ceramic electrodes based on Sb-doped SnO2 for the removal of emerging compounds present in wastewater

Mora-Gómez

García-Gabaldón

Ortega

et al. 2018

Ceramics International

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“…These vacancies contribute to the electron conductivity, providing a high concentration of free electrons, which also explains the better electronic conductivity of ITO films. [ 28 ] The Sn 3d spectrum of ITO film exhibits two distinct peaks at 486.64 and 495.83 eV corresponding to the Sn 3d 5/2 and Sn 3d 3/2 spin–orbit peaks of Sn 3d, respectively (Figure 3e). The positions of the In 3d and Sn 3d peaks point to the exclusive presence of both species in the oxidation states In 3+ and Sn 4+ , respectively, without indication for the formation of metallic components (the In 3d 5/2 peak position of metallic indium is at 443.6 eV, the Sn 3d 5/2 peak position of metallic tin occurs at 484.9 eV).…”

Section: Resultsmentioning

confidence: 99%

Atomic Layer Deposition of Indium‐Tin‐Oxide as Multifunctional Coatings on V₂O₅ Thin‐Film Model Electrode for Lithium‐Ion Batteries

Zhao

Nisula

Dhara

et al. 2020

Adv Materials Inter

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LIBs that provided an understanding of how ITO works in LIBs. There are three main ways ITO materials have been exploited-i) As an electrode protecting layer: [5] ITO coated on LiMn 2 O 4 (LMO) showed enhancement in the electrochemical performance when compared to pristine LMO. It is believed that the conductive ITO layer can reduce cell polarization, interparticle resistance, and charge-transfer resistance between LMO particles and the electrolyte solution. Furthermore, the ITO layer could suppress Mn dissolution as well. ii) As a current collector: [6] The electronic conductivity of ITO makes it comparable to the commonly used current collector such as Cu, Pt, and TiN. Additionally, oxidation, a major issue for TiN and Cu current collectors, does not occur in ITO as the ions involved are already in the highest oxidation state (In 3+ and Sn 4+). This makes ITO a promising candidate to serve as a current collector especially suitable for potentially high temperature conditions. iii) As an anode: [7] In 2 O 3 and SnO 2 are electrochemically active toward lithium at the potential range of 0-3 V (vs Li + /Li) with high theoretical capacities (In 2 O 3 578 mAh g −1 , SnO 2 782 mAh g −1). Based on this background, it is believed that ITO can also be exploited as a potential anode material for LIBs. Several deposition techniques are reported to obtain ITO thin-films including spray pyrolysis, [8] sol-gel methods, [9] pulsed laser deposition, [10] e-beam evaporation, [11] physical vapor deposition, [12] chemical vapor deposition, [13] and atomic layer deposition (ALD). [14] Among these methods, ALD is a thin-film deposition technique that is based on alternating, self-limiting chemical reactions between gaseous precursors and a solid surface to produce high quality, uniform and conformal coatings even at low growth temperatures. [15] The ALD method enables precise control over the thickness, composition, and structure (such as intermixed or laminated structure) of the films and allows for conformal coatings to be applied on all exposed complex surfaces, such as 3D silicon micropillars, [16] 3D anodic aluminum oxide, [17] aerogel, [18] and mesoporous membranes. [19] The preparation of ITO thinfilms via the ALD method was reported in several previous This work demonstrates the possible usages of indium tin oxide (ITO) thin-films as multifunctional coatings on V 2 O 5 model electrodes for lithium-ion batteries (LIBs). The thin films are produced with the atomic layer deposition (ALD) method via adjusting the ratio of In 2 O 3 and SnO 2 sub-layers to a well-controlled In: Sn contents. The highest conductivity value (7.37 × 10 −4 Ω cm) of as-grown ITO film is obtained from the sample containing 5% SnO 2 of overall ALD cycles. The ITO thin-films are further investigated as multifunctional coatings on ALD V 2 O 5 electrodes for LIBs: At first, dual electronic and ionic conductive protecting properties of ITO layer are explored to attenuate the fading of the battery capacity by improving the cycling stability. Second, the feasi...

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“…Determination of band gap was determined using the Tauc plot formalism from data obtained by UV-Vis spectrophotometry based on the Tauc relation: (αhν) 1/y = β(hν − E g ) where α is the absorption coefficient (absorbance/film thickness), β is the band tailing parameter, h is the Planck's constant, ν is the frequency of incident light, E g is the energy of the optical band gap and y is the power factor, which depends upon the nature of the transition (semi-conducting materials, y = 0.5 for direct allowed transitions). Therefore: (αhν) 2…”

Section: Dalton Transactions Papermentioning

confidence: 99%

“…microelectronic displays on touch screens. The electrical conductivity of In 2 O 3 is controlled by the stoichiometry of the film 2,3 and is typically enhanced by substituting the In atoms with 5-10 atomic % Sn. 4,5 All applications of In 2 O 3 as transparent conducting layers require the deposition of high-quality thin films of In 2 O 3 .…”

Section: Introductionmentioning

confidence: 99%

Thermal atomic layer deposition of In₂O₃ thin films using a homoleptic indium triazenide precursor and water

et al. 2022

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Influence of annealing temperature on structural properties of ITO thin-films on graphite substrate

Cited by 19 publications

References 21 publications

Evaluation of new ceramic electrodes based on Sb-doped SnO2 for the removal of emerging compounds present in wastewater

Evaluation of new ceramic electrodes based on Sb-doped SnO2 for the removal of emerging compounds present in wastewater

Atomic Layer Deposition of Indium‐Tin‐Oxide as Multifunctional Coatings on V₂O₅ Thin‐Film Model Electrode for Lithium‐Ion Batteries

Thermal atomic layer deposition of In₂O₃ thin films using a homoleptic indium triazenide precursor and water

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Influence of annealing temperature on structural properties of ITO thin-films on graphite substrate

Cited by 19 publications

References 21 publications

Evaluation of new ceramic electrodes based on Sb-doped SnO2 for the removal of emerging compounds present in wastewater

Evaluation of new ceramic electrodes based on Sb-doped SnO2 for the removal of emerging compounds present in wastewater

Atomic Layer Deposition of Indium‐Tin‐Oxide as Multifunctional Coatings on V2O5 Thin‐Film Model Electrode for Lithium‐Ion Batteries

Thermal atomic layer deposition of In2O3 thin films using a homoleptic indium triazenide precursor and water

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Atomic Layer Deposition of Indium‐Tin‐Oxide as Multifunctional Coatings on V₂O₅ Thin‐Film Model Electrode for Lithium‐Ion Batteries

Thermal atomic layer deposition of In₂O₃ thin films using a homoleptic indium triazenide precursor and water