Influence of As4 flux on the growth kinetics, structure, and optical properties of InAs∕GaAs quantum dots

Abstract

Influences of the spacer layer growth temperature on multilayer InAs ∕ GaAs quantum dot structures

Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate

“…A single line emits from single dot at wavelength centered around 900 nm observed in 83% , we note that the QD emission is rare in the center part of this sample as it takes a long time to find a emission line, thus we believe QD height of 6 nm do no contribution to the emission. The broad peaks in Samples B–D are identified as the emission from the 7–8 nm height InGaAs QDs correspond to previous study [ 20 ]. We suppose that large QDs with height above 8.5 nm have been decomposed during indium flushing, which approved by the reconstruction pattern seen in RHEED transfers to (2 × 4) again.…”

“…The number of emission lines increase from the center to the edge as the density in AFM illustrated. We should note that small dots below 6 nm would not be illuminated [20]. Now we turn to study the density distribution of sample H in the wafer-scale.…”

“…However, reliable wafer-scale growth techniques have proved elusive. Low density less than 1 is a crucial element for single photon emitter, which needs to precisely control of the experimental parameters including growth temperature [ 17 ], deposition rate [ 18 ], deposition amounts [ 19 ], As flux [ 20 ], and III/V ratio [ 21 ]. A gradient InAs quantum dot growth technique, which via stopping substrate rotation and applying an Indium flux gradient to form a gradient density of InAs QDs [ 19 , 22 , 23 ], has been considered the most effective way to achieve low density InAs QDs.…”

Improving size distribution of InAs quantum dots for intersubband devices

“…2a. The increase in QD size with As 4 pressure was reported to coincide with an improvement in size uniformity [36]. The standard deviation measured in QD height, Fig.…”

Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition

“…The lower Ga content in the islands in sample QD InAs (compared to sample QD In þ 8s ) indicates that the diffusion of Ga from the substrate to the islands is suppressed by the supply of the As flux. This is because the presence of As adatoms on the surface introduced by the AsH 3 flow stabilizes Ga-As bonds on the substrate surface, leading to the suppression of Ga diffusion to the islands after the deposition of In Although the evolution of size and density of S-K InAs QDs under As ambient has been widely studied, 31,32 little is known about the effect of As flux on the surface morphology evolution of InAs QDs grown by droplet epitaxy. Figure 3 shows plan-view SEM images of the three samples.…”