Influence of base pressure on property of sputtering deposited ITO film

Yang, Shumin; Zhong, Jingming; Sun, Bin; Zeng, Xueyun; Luo, Wen Qin; Zhao, Xu; Shu, Yongchun; Chen, Jie; He, Jilin

doi:10.1007/s10854-019-01662-w

Cited by 19 publications

(12 citation statements)

References 33 publications

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“…This phenomenon is caused by the low doping efficiency of Al atoms in ZnO films [ 28 ]. Notably, electron concentration of the AZO films is comparable to that of the previously-reported ITO films [ 29 , 30 , 31 ]. Resistivity of the ZnO and AZO films are shown in Figure 2 b.…”

Section: Resultssupporting

confidence: 75%

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

et al. 2022

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Transparent electrodes are a core component for transparent electron devices, photoelectric devices, and advanced displays. In this work, we fabricate fully-transparent, highly-conductive Al-doped ZnO (AZO) films using an atomic layer deposition (ALD) system method of repeatedly stacking ZnO and Al2O3 layers. The influences of Al cycle ratio (0, 2, 3, and 4%) on optical property, conductivity, crystallinity, surface morphology, and material components of the AZO films are examined, and current conduction mechanisms of the AZO films are analyzed. We found that Al doping increases electron concentration and optical bandgap width, allowing the AZO films to excellently combine low resistivity with high transmittance. Besides, Al doping induces preferred-growth-orientation transition from (002) to (100), which improves surface property and enhances current conduction across the AZO films. Interestingly, the AZO films with an Al cycle ratio of 3% show preferable film properties. Transparent ZnO thin film transistors (TFTs) with AZO electrodes are fabricated, and the ZnO TFTs exhibit superior transparency and high performance. This work accelerates the practical application of the ALD process in fabricating transparent electrodes.

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Section: Resultssupporting

confidence: 75%

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

et al. 2022

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“…It is known that the carrier concentration in the ITO films is roughly dependent on the concentration of Sn doping and oxygen vacancies. High oxygen partial pressure is not conducive to the formation of oxygen vacancy, leading to the decrease of the carrier concentration and further resulting in the increase of resistivity Figure b shows the carrier concentrations of ITO films.…”

Section: Results and Discussionmentioning

confidence: 99%

“…High oxygen partial pressure is not conducive to the formation of oxygen vacancy, leading to the decrease of the carrier concentration and further resulting in the increase of resistivity. 47 Figure 6b shows the carrier concentrations of ITO films. The carrier concentrations of ITO films of (100)-, (110)-, and (111)orientations decrease with the increase of the oxygen partial pressure, which was consistent with the analysis mentioned above.…”

Section: Resultsmentioning

confidence: 99%

“…The O 1s spectra could be fitted as two peaks of lattice oxygen (O I peaks in red) and adsorbed oxygen related to oxygen defects (O II peaks in blue). The peak area ratio of O II /(O I + O II ) that reflected the oxygen defects content 47 in the ITO films at 2.2 Pa were 0.471, 0.467, and 0.470. The ratios are almost the same, indicating that the oxygen defects are not the cause of differences in the carrier concentration.…”

Section: Resultsmentioning

confidence: 99%

“…In the early studies, researchers believed that there was no significant difference in the electrical properties between polycrystalline and epitaxial ITO films . However, in recent years, many researchers found that the preferred orientation could influence the electrical/optical properties in polycrystalline ITO films, and the correlation between relative intensities of typical XRD peaks, such as (222), (400), (440), and (622), and resistivity/mobility/transparency was often discussed. ,,− For example, Zhuo et al found that the increase of (100)-oriented grains was accompanied by the decrease of carrier mobility . It means that the crystal orientations will affect the electrical properties of ITO films.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Influence of Substrate Orientation and Oxygen Partial Pressure on the Morphology, Structure, and Electrical Property of Epitaxial Indium Tin Oxide Films

Huang

2021

Crystal Growth & Design

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Indium tin oxide (ITO, tin-doped indium oxide) has been widely used in optoelectronic and other research fields because of its excellent electrical conductivity. However, there is a lack of systemic research on the influence of crystal orientation on the electrical properties of epitaxial ITO films. In this work, the epitaxial ITO films were deposited on low index planes of yttria-stabilized zirconia substrates by direct current magnetron sputtering at different oxygen partial pressures ranging from 0 to 3 Pa. The carrier concentration of the ITO film decreased with the increase of the oxygen partial pressure and further leading to the increase of overall resistivity. In addition, we also found that the Hall mobilities of ITO (100) films rapidly decreased with the oxygen partial pressure, while the Hall mobilities of ITO (111) films remained unchanged. The anisotropy of the carrier mobility was the main factor for the resistivity difference of ITO films with different orientations at high oxygen partial pressure.

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Dopant Control of Solution‐Processed CuI:S for Highly Conductive p‐Type Transparent Electrode

Son,

Kim,

Song

et al. 2024

Advanced Science

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Copper iodide (CuI) has garnered considerable attention as a promising alternative to p‐type transparent conducting oxides owing to its low cation vacancy formation energy, shallow acceptor level, and readily modifiable conductivity via doping. Although sulfur (S) doping through liquid iodination has exhibited high efficacy in enhancing the conductivity with record high figure of merit (FOM) of 630 00 MΩ−1, solution‐processed S‐doped CuI (CuI:S) for low‐cost large area fabrication has yet to be explored. Here, a highly conducting CuI:S thin‐film for p‐type transparent conducting electrode (TCE) is reported using low temperature solution‐processing with thiourea derivatives. The optimization of thiourea dopant is determined through a comprehensive acid‐base study, considering the effects of steric hindrance. The modification of active groups of thioureas facilitated a varying carrier concentration range of 9 × 1018–2.52 × 1020 cm−3 and conductivities of 4.4–390.7 S cm−1. Consequently, N‐ethylthiourea‐doped CuI:S exhibited a FOM value of 7 600 MΩ−1, which is the highest value among solution‐processed p‐type TCEs to date. Moreover, the formulation of CuI:S solution for highly conductive p‐type TCEs can be extended to CuI:S inks, facilitating high‐throughput solution‐processes such as inkjet printing and spray coating.

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Influence of base pressure on property of sputtering deposited ITO film

Cited by 19 publications

References 33 publications

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

Influence of Substrate Orientation and Oxygen Partial Pressure on the Morphology, Structure, and Electrical Property of Epitaxial Indium Tin Oxide Films

Dopant Control of Solution‐Processed CuI:S for Highly Conductive p‐Type Transparent Electrode

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