Influence of Bi content on linear and nonlinear optical properties of As40Se60-xBix chalcogenide thin films

Behera, Mukta; Naik, Ramakanta; Sripan, C.; Ganesan, R.; Mishra, N. C.

doi:10.1016/j.cap.2019.05.007

Cited by 61 publications

(17 citation statements)

References 72 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The increase in n 2 is attributed toward the increase in the defect states over the bandgap region, and also due to the larger atomic size of the bismuth atoms which causes a higher polarization effect inside the system that increases the non-linear parameters. 23 (6…”

Section: Non-linear Optical Parametersmentioning

confidence: 99%

“…22 The doping of Bi showed to have a greater influence on the non-linear behavior in the As-Se-Bi materials, which makes it interesting for manufacturing non-linear optical devices. 23 Furthermore, the non-linear refractive index and susceptibility increased with bismuth content in Se 85x Te 15 Bi x thin films and showed a higher value than pure silica, oxide, and other Se-based glasses. This makes these materials suitable for use in optical switching and high-speed communication fibers.…”

mentioning

confidence: 96%

See 1 more Smart Citation

Role of Bismuth incorporation on the structural and optical properties in Bi_xIn_35‐xSe₆₅ thin films for photonic applications

Priyadarshini¹,

Das²,

Alagarasan

et al. 2021

J. Am. Ceram. Soc.

Self Cite

View full text Add to dashboard Cite

The alloying of chalcogen elements with other group members form very effective and dynamic optical systems which are used in optoelectronics, photonic materials, phase change materials, and light communication purposes. [1][2][3] The unique nature of such materials is that their properties can be easily tuned by varying the composition, 4 thermal annealing, 5 photoinduced diffusion, 6 ion irradiation, 7 laser irradiation, 8 and many other techniques. The structural flexibility due to the available lone pair electrons makes it easy for such kind of changes which brings high transparency, low phonon energy, high linear, and non-linear refractive indices, and thirdorder non-linear susceptibility. 9 The addition of the third element into the binary compounds brings drastic changes in its structural (amorphous-crystalline), 10 optical (bandgap, refractive index, absorption coefficient, extinction coefficient, optical density, skin depth, dispersion parameters), 11,12 electrical (electrical conductivity, Hall coefficient), 13 thermal (thermal conductivity), electronic (electronic susceptibility,

show abstract

Section: Non-linear Optical Parametersmentioning

confidence: 99%

mentioning

confidence: 96%

Role of Bismuth incorporation on the structural and optical properties in Bi_xIn_35‐xSe₆₅ thin films for photonic applications

Priyadarshini¹,

Das²,

Alagarasan

et al. 2021

J. Am. Ceram. Soc.

Self Cite

View full text Add to dashboard Cite

show abstract

“…The extinction coefficient (k) measures the loss of light that got absorbed or scattered per unit volume and also represents the material ability for polarization. The value of k was calculated from its dependence on α and λ using the relation which is given by (Behera et al 2019);…”

Section: Extinction Coefficient (K)mentioning

confidence: 99%

“…The value of dielectric constant (ε ∞ ) as well as static refractive index (n 0 ) was evaluated by using the formula (Behera et al 2019);…”

Section: Single Oscillator Energy (E 0 ) and Dispersion Energy (E D )mentioning

confidence: 99%

Investigation of amorphous-crystalline transformation induced optical and electronic properties change in annealed As50Se50 thin films

Sahoo¹,

Priyadarshini²,

Dandela³

et al. 2021

Opt Quant Electron

Self Cite

View full text Add to dashboard Cite

The present work reports the amorphous-crystalline phase transformation in thermally evaporated As 50 Se 50 thin films upon annealing at below T g (423 K) and above T g (523 K). The structural transition was probed by XRD, Raman and X-ray photoelectron spectroscopy. The composition and surface morphology were probed by EDS and FESEM techniques. The transmittance and reflectance spectra over the wavelength range 500 nm-1200 nm were used to deduce the optical parameters. The various optical parameters of the as-prepared and annealed As 50 Se 50 thin films were estimated and discussed in terms of density of defect states and disorders. The indirect optical energy gap decreased for the 423 K annealed film and abruptly increased for 523 K annealed film as compared to the as-prepared film. The Swanepoel envelope method, WDD model, and Sellemeire postulates were employed for the analysis of refractive index, static refractive index, oscillator energy, dispersion energy, oscillator wavelength and dielectric constant. The changes in the linear and nonlinear properties showed opposite behavior for the two annealed films. The non-linear refractive index and 3rd order susceptibility were found to be increased for 423 K annealed film and decreased for the 523 K annealed film. The optical as well as the electrical conductivity changed with annealing and the electrical susceptibility increased for 523 K annealed film. The tunable optical properties can be applied for several optoelectronic applications.

show abstract

“…[3][4][5] The tuning of such optical properties of chalcogenide thin lms can be done with various processes like doping of elements, thermal annealing, laser irradiation, ion irradiation, etc. [6][7][8][9][10] Out of these techniques, thermal annealing is considered a simple way to bring about changes in the structural, optical and electrical properties in such types of materials. The surface morphology along with the interior of the material is being modied with temperature and time.…”

Section: Introductionmentioning

confidence: 99%

Role of annealing temperature on optimizing the linear and nonlinear optical properties of As₄₀Se₅₀Ge₁₀ films

Sahoo¹,

Priyadarshini²,

Aparimita

et al. 2020

RSC Adv.

Self Cite

View full text Add to dashboard Cite

show abstract

Influence of Bi content on linear and nonlinear optical properties of As40Se60-xBix chalcogenide thin films

Cited by 61 publications

References 72 publications

Role of Bismuth incorporation on the structural and optical properties in Bi_xIn_35‐xSe₆₅ thin films for photonic applications

Role of Bismuth incorporation on the structural and optical properties in Bi_xIn_35‐xSe₆₅ thin films for photonic applications

Investigation of amorphous-crystalline transformation induced optical and electronic properties change in annealed As50Se50 thin films

Role of annealing temperature on optimizing the linear and nonlinear optical properties of As₄₀Se₅₀Ge₁₀ films

Contact Info

Product

Resources

About

Influence of Bi content on linear and nonlinear optical properties of As40Se60-xBix chalcogenide thin films

Cited by 61 publications

References 72 publications

Role of Bismuth incorporation on the structural and optical properties in BixIn35‐xSe65 thin films for photonic applications

Role of Bismuth incorporation on the structural and optical properties in BixIn35‐xSe65 thin films for photonic applications

Investigation of amorphous-crystalline transformation induced optical and electronic properties change in annealed As50Se50 thin films

Role of annealing temperature on optimizing the linear and nonlinear optical properties of As40Se50Ge10 films

Contact Info

Product

Resources

About

Role of Bismuth incorporation on the structural and optical properties in Bi_xIn_35‐xSe₆₅ thin films for photonic applications

Role of Bismuth incorporation on the structural and optical properties in Bi_xIn_35‐xSe₆₅ thin films for photonic applications

Role of annealing temperature on optimizing the linear and nonlinear optical properties of As₄₀Se₅₀Ge₁₀ films