Influence of Both Magnetic Field and Temperature on Silicon Solar Cell Base Optimum Thickness Determination

Abstract

The minority carrier's recombination velocity at the junction and at the back surface is used for the modeling and determination of the optimum thickness of the base of a silicon solar cell in the static regime, under magnetic field and temperature influence. This study takes into account the Umklapp process and the Lorentz effect on the minority carriers photogenerated in the base.

n<sup>+</sup>-p-p<sup>+</sup> Silicon Solar Cell Base Optimum Thickness Determination under Magnetic Field

“…Modelling studies by combination of two to two or three of the previous conditions [29] [30] [42] have revealed the important economy of matter in the manufacture of solar cell, for these specific uses. The mathematical relationships between the optimum thickness of the base of the solar cell and the parameters of these specific conditions have been established It appears from the analysis of these results that the deflection of minority carriers due to the magnetic field, leads to lower optimum thicknesses than in other cases, such as thermal agitation (Umklap process), or the use of monochromatic absorption coefficient radiation (short wavelengths).…”

“…[29] [30] [40] [41] [42] [43] is applied here, according to two ranges of magnetic field values. Sb1 and Sb2 are plotted versus H base thickness, for given magnetic values.…”

Optimum Basethickness Determination of a Backilluminated Silicon Solar Cell: Irradiation Effect

“…Knowing that the excess minority carrier recombination velocity depends on diffusion parameters (D, L) and optical parameters (monochromatic or polychromatic absorption coefficient of the material), results on the determination of optimum thickness were produced. These results take into account external factors that influence diffusion parameters (L, D).These include temperature [29], magnetic field [30], irradiation flow by charged particles [ 14], frequency of modulation[31] of optical or electrical signal, or combination of these factors [32], [33]. The conditions of manufacture of the semiconductor material through the doping rate also affect the diffusion coefficient [8].…”

Radiative and Magnetically Stimulated Evolution of Nanostructured Complexes in Silicon Surface Layers

“…A weak magnetic field can stimulate the reorientation of the electron spin of the atomic defects [33][34][35][36]. Consequently, new nanoscale complexes are formed, which have other kinetic parameters and change the characteristics of the silicon structures [37][38][39][40]. Therefore, the influence of such fields can be used as an additional technological operation to improve the characteristics of silicon structures.…”