Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe2 Thin Films

Zhang, Xiaotian; Balushi, Zakaria Y. Al; Zhang, Fu; Choudhury, Tanushree H.; Eichfeld, Sarah M.; Alem, Nasim; Jackson, Thomas N.; Robinson, Joshua A.; Redwing, Joan M.

doi:10.1007/s11664-016-5033-0

Cited by 54 publications

(63 citation statements)

References 28 publications

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“…3), which can be attributed to the D and G Raman modes of carbon. 19 A similar carbon layer was reported by Zhang et al 20 during growth of WSe 2 . They ascribed this film to deposition of hydrocarbon groups from the dimethyl selenide precursor and therefore changed the S precursor to H 2 Se.…”

Section: Figure 1asupporting

confidence: 80%

Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS2

Marx

Grundmann

Lin

et al. 2017

Journal of Elec Materi

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The influence of the main growth parameters on the growth mechanism and film formation processes during metalorganic vapor-phase epitaxy (MOVPE) of two-dimensional MoS 2 on sapphire (0001) have been investigated. Deposition was performed using molybdenum hexacarbonyl and di-tert-butyl sulfide as metalorganic precursors in a horizontal hot-wall MOVPE reactor from AIXTRON. The structural properties of the MoS 2 films were analyzed by atomic force microscopy, scanning electron microscopy, and Raman spectroscopy. It was found that a substrate prebake step prior to growth reduced the nucleation density of the polycrystalline film. Simultaneously, the size of the MoS 2 domains increased and the formation of parasitic carbonaceous film was suppressed. Additionally, the influence of growth parameters such as reactor pressure and surface temperature is discussed. An upper limit for these parameters was found, beyond which strong parasitic deposition or incorporation of carbon into MoS 2 took place. This carbon contamination became significant at reactor pressure above 100 hPa and temperature above 900°C.

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Section: Figure 1asupporting

confidence: 80%

Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS2

Marx

Grundmann

Lin

et al. 2017

Journal of Elec Materi

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“…Eichfeld et al [34] obtained MOCVD flakes of WSe 2 on the order of 10 microns wide by fine tuning the injection ratio of W and Se atoms. Zhang et al [35] observed that MOCVD WSe 2 growths tended to produce poor quality graphene as a byproduct due to the lingering of carbon atoms from the organometallic precursor, and found that using an inorganic Se precursor helped ensure sample purity.…”

Section: Metal Organic Chemical Vapor Deposition (Mocvd)mentioning

confidence: 99%

“…Since the promise of large-scale TMD architectures relies upon synthesizing homogenous materials, precise control over growth reactions is essential. However, MOCVD reactants, being organic compounds, often form TMD films with significant carbon contamination [35]. Naturally, this severely compromises sample quality.…”

Section: Metal Organic Chemical Vapor Deposition (Mocvd)mentioning

confidence: 99%

“…Choi et al [29] were able to use water to oxidize carbon out of grown lattices, offering a general method to enhance MOCVD sample purity. Zhang et al's [35] strategy to minimize carbon in precursors also serves as a valid strategy. While MoS 2 can be reliably realized on the wafer scale, MOCVD methods for other TMDs need to be advanced significantly in both scale, quality, and efficiency.…”

Section: Metal Organic Chemical Vapor Deposition (Mocvd)mentioning

confidence: 99%

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Large area few-layer TMD film growths and their applications

2020

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Research on 2D materials is one of the core themes of modern condensed matter physics. Prompted by the experimental isolation of graphene, much attention has been given to the unique optical, electronic, and structural properties of these materials. In the past few years, semiconducting transition metal dichalcogenides (TMDs) have attracted increasing interest due to properties such as direct band gaps and intrinsically broken inversion symmetry. Practical utilization of these properties demands large-area synthesis. While films of graphene have been by now synthesized on the order of square meters, analogous achievements are difficult for TMDs given the complexity of their growth kinetics. This article provides an overview of methods used to synthesize films of mono-and few-layer TMDs, comparing spatial and time scales for the different growth strategies. A special emphasis is placed on the unique applications enabled by such large-scale realization, in fields such as electronics and optics.

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“…The synthesis of 2D/3D heterojunctions has been investigated extensively using mechanically exfoliated 2D crystals transferred onto bulk crystals [158,195,196,197] and wafer-scale chemical vapor transport [160,198] or chemical vapor deposition [199,200,201] growth of 2D materials on epitaxial templates and molecular beam epitaxy (MBE). The method used in this work, MBE, offers some distinct advantages due to the ability to realize sharp interfaces, excellent control of background impurities, and powerful in situ characterization techniques [169,202].…”

Section: Large-area Snse 2 /Gan Heterojunction Diodes Grown By Molecumentioning

confidence: 99%

Molecular Beam Epitaxy and High-Pressure Studies of van der Waals Magnets

O'Hara

2019

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Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe2 Thin Films

Cited by 54 publications

References 28 publications

Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS2

Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS2

Large area few-layer TMD film growths and their applications

Molecular Beam Epitaxy and High-Pressure Studies of van der Waals Magnets

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