Influence of Carbon Transport Kinetics on Solution Growth of β-Silicon Carbide Crystals

BarHett, R. W.; Nelson, W. E.; Halden, F. A.

doi:10.1149/1.2426435

Cited by 15 publications

(3 citation statements)

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“…Deposition of freely nucleating crystals from solution has been studied by Knippenberg (1963), Halden (1960, p. 115), andBeckmann (1963) and more recently by Bartlett et al (1967), most of the deposits being p-Sic. Halden has also experimented with pulling crystals from a melt.…”

Section: Introductionmentioning

confidence: 99%

Solution grown SiC p-n junctions

Brander

Sutton

1969

J. Phys. D: Appl. Phys.

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Epitaxial growth of silicon carbide on α-SiC substrates has been carried out at 1650°C in carbon-saturated silicon solutions. The quality of growth is found to be strongly dependent on the inclination of the substrate in the melt, an angle of 40° to the horizontal resulting in the growth of uniform layers of the same polytype as the substrate. With this technique p-n junctions have been prepared using nitrogen, aluminium and boron impurities, and their diode and electroluminescent properties examined.

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Section: Introductionmentioning

confidence: 99%

Solution grown SiC p-n junctions

Brander

Sutton

1969

J. Phys. D: Appl. Phys.

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“…Many studies deal with the synthesis of SiC-based materials by a wide range of processes [1][2][3][4][5][6][7][8][9][10]. On the basis of these previous studies, one has to focus attention on the interactions between a liquid phase and SiC because they could have some influences on the resulting properties.…”

Section: Introductionmentioning

confidence: 99%

Microstructural evolution of SiC powder in molten silicon

Roger

Petitcorps

2018

Ceramics International

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SiCpowder/Simatrix composites represent a new class of microstructurally toughened materials. The interactions between molten silicon and submicronic SiC powder have been considered since it could originate some limitations on the final properties of the material. Experiments putting in interaction a SiC powder and molten Si were performed while heating up to final values ranging between 1450 and 1600°C for duration up to 8 hours. The volume ratio of SiC and silicon was equal to one and SiC particles were freely dispersed within the liquid. X-ray diffraction analyses demonstrated that the apparent crystallites size increase of SiC powder followed a ripening law corresponding to a limitation either by volume diffusion or by dissolution into the liquid. Depending on the relevant mechanism, the activation energy of the crystallites' growth has been found equal to 35750 kJ.mol-1 or 44157 kJ.mol-1. An agglomeration-coarsening process of SiC particles was also identified which promoted a quick formation of larger particles.

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“…In this way, many studies deal about the synthesis of SiC by using different processes. The general idea is to promote the wetting and the reaction between molten silicon and carbon in order to form SiC [4][5][6][7][8][9][10][11][12][13]. The synthesis of composites materials for high temperature applications by reactive infiltration of silicon in carbon-filled preform is also a promising application of this system [14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Examination of the interaction between liquid silicon and bulk silicon carbide

Roger

Marchais

Petitcorps

2015

Journal of Crystal Growth

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International audienceLittle information is available about the evolution of SiC in presence of molten silicon. In this context, two kinds of experiments relative to the interaction between SiC substrates and molten Si were performed between 1450 and 1600°C with: 1) dense α-SiC bars and 2) dense α-SiC pellets coated with a β-SiC layer deposited by CVD. The results obtained indicate that an important crystal growth occurs in any cases. Large and facetted SiC crystals have grown on the surface of the SiC substrates and on the whole surface of molten silicon. These crystals are formed by dissolution-growth mechanism of SiC substrates with kinetics depending on the temperature. Low thermal gradients within the samples and between the inner parts and/or the surface of the samples could noticeably promote the evolution of the system by generating a carbon flux. The interaction between molten silicon and SiC is of importance because it could have some effects on the physical and chemical properties of the materials. It is well known that large grains are deleterious for mechanical properties

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Influence of Carbon Transport Kinetics on Solution Growth of β-Silicon Carbide Crystals

Cited by 15 publications

References 1 publication

Solution grown SiC p-n junctions

Solution grown SiC p-n junctions

Microstructural evolution of SiC powder in molten silicon

Examination of the interaction between liquid silicon and bulk silicon carbide

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