Abstract:A phase field method was used to investigate the influence of charge accumulation at the grain boundary on the electrical behavior of a ferroelectric field-effect transistor containing a polycrystalline gate. Both the domain structure and the electrical behavior of the ferroelectric field-effect transistor were found to depend on the coefficient χ, which represents the charge accumulation at the grain boundary. With increasing χ, both the width of the memory window of the capacitance–voltage curves and the on-… Show more
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.