Influence of chromium on minority carrier properties in intentionally contaminated n-type mc-Si wafers

Martinuzzi, S.; Warchol, F.; Dubois,; Enjalbert, N.

doi:10.1016/j.mseb.2008.05.015

Cited by 4 publications

(3 citation statements)

References 4 publications

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“…Following these studies, the tolerable concentration of chromium in p‐type silicon is lower than for iron. Phosphorus diffusion gettering of chromium was found to be quite effective: A strong increase of the minority carrier lifetime during phosphorus diffusion was shown for chromium‐contaminated n‐type and p‐type silicon wafers.…”

Section: Introductionmentioning

confidence: 99%

Chromium distribution in multicrystalline silicon: comparison of simulations and experiments

Schön

Habenicht

Warta

et al. 2012

Progress in Photovoltaics

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We studied the precipitation of chromium in multicrystalline silicon during the crystallization process and temperature treatments typical for solar cell processing. A model which was already successfully used for simulating heterogeneous precipitation of iron is transferred to chromium, allowing two‐dimensional simulations of dissolved chromium and precipitate density. The observed accordance with spatially resolved measurements demonstrates the similarity of chromium to iron precipitation and the ability of our model to predict the dissolved chromium concentration in multicrystalline silicon. After the crystallization process, a high impact of chromium on the carrier lifetime of wafers originating from an ingot intentionally contaminated with 20 ppma chromium in the melt was observed. The concentration of dissolved chromium was significantly reduced by phosphorus diffusion gettering or oxidation at 815°C. Copyright © 2012 John Wiley & Sons, Ltd.

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Section: Introductionmentioning

confidence: 99%

Chromium distribution in multicrystalline silicon: comparison of simulations and experiments

Schön

Habenicht

Warta

et al. 2012

Progress in Photovoltaics

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“…A good summary was given by Coletti et al [26,49]. Fortunately, Cr is quite volatile at high temperature (above 1205 C) and could be easily removed during solidification (k eff w 10 À6 ) [51]. In addition, the sensitivity of the impurity level depends on the capture cross-section ratio.…”

Section: Transition Metalsmentioning

confidence: 99%

Multicrystalline Silicon Crystal Growth for Photovoltaic Applications

Lan

Hsu

Nakajima

2015

Handbook of Crystal Growth

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“…Second, MacDonald et al [21] and Schmidt et al [19], respectively, measured [Fe i ] about three orders of magnitude lower than the total [Fe] and [Cr i ] about one order of magnitude lower than the total [Cr]. Moreover, it has been shown on intentionally contaminated n-type mc-Si wafers that the concentration of Cr i atoms is sufficiently low to be not detrimental, thanks to a marked gettering effect of the high temperature phosphorus diffusion step [22]. Contrary to Veirman et al, the hypothesis of dopantlimited t has to be taken with caution in our case because the observed t eff profile could be explained by the recombination activity of other defects than Fe or Cr as well.…”

Section: Impact Of Processing Stepsmentioning

confidence: 99%

N‐type solar‐grade silicon purified via the metallurgical route: characterisation and fabrication of solar cells

Schutz-Kuchly

Sanzone

Veschetti

2012

Progress in Photovoltaics

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This study focuses on the characterisation and the fabrication of solar cells using n‐type multicrystalline silicon purified via the metallurgical route. Electrical and chemical analyses were performed on wafers taken from several positions along the crystallised ingot. The impact of the fabrication processing steps was investigated via effective carrier lifetime measurements. Solar cells were processed, and their efficiencies were found to be dependent on the position of the wafer along the ingot height, that is, the wafer's resistivity. A maximum conversion efficiency of 15.0% was obtained on cells from the bottom part of the ingot. In this study, the minimum resistivity value of 0.4 Ω cm resistivity is given in order to reach adequate cell efficiency. Light‐soaking experiments were then performed on the fabricated cells. No significant variations of the cell performances were observed even after 110 h at 60 °C, meaning that the fabricated cells are stable under illumination. Copyright © 2012 John Wiley & Sons, Ltd.

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Influence of chromium on minority carrier properties in intentionally contaminated n-type mc-Si wafers

Cited by 4 publications

References 4 publications

Chromium distribution in multicrystalline silicon: comparison of simulations and experiments

Chromium distribution in multicrystalline silicon: comparison of simulations and experiments

Multicrystalline Silicon Crystal Growth for Photovoltaic Applications

N‐type solar‐grade silicon purified via the metallurgical route: characterisation and fabrication of solar cells

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